Nonvolatile Memory Design - Hai Li, Yiran Chen

Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

, (Autoren)

Buch | Hardcover
208 Seiten
2011
Crc Press Inc (Verlag)
978-1-4398-0745-3 (ISBN)
309,95 inkl. MwSt
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Hai Li

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

Erscheint lt. Verlag 31.1.2012
Zusatzinfo 10 Tables, black and white; 175 Illustrations, black and white
Verlagsort Bosa Roca
Sprache englisch
Maße 156 x 234 mm
Gewicht 498 g
Themenwelt Mathematik / Informatik Informatik Theorie / Studium
Technik Elektrotechnik / Energietechnik
ISBN-10 1-4398-0745-0 / 1439807450
ISBN-13 978-1-4398-0745-3 / 9781439807453
Zustand Neuware
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