Nonvolatile Memory Design - Hai Li, Yiran Chen

Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

, (Autoren)

Buch | Softcover
204 Seiten
2017
CRC Press (Verlag)
978-1-138-07663-1 (ISBN)
119,95 inkl. MwSt
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Hai Li

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

Erscheinungsdatum
Zusatzinfo 10 Tables, black and white; 175 Illustrations, black and white
Verlagsort London
Sprache englisch
Maße 156 x 234 mm
Gewicht 453 g
Themenwelt Mathematik / Informatik Informatik Theorie / Studium
Technik Elektrotechnik / Energietechnik
Technik Umwelttechnik / Biotechnologie
ISBN-10 1-138-07663-5 / 1138076635
ISBN-13 978-1-138-07663-1 / 9781138076631
Zustand Neuware
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