Subsecond Annealing of Advanced Materials
Annealing by Lasers, Flash Lamps and Swift Heavy Ions
Seiten
2013
|
2014
Springer International Publishing (Verlag)
978-3-319-03130-9 (ISBN)
Springer International Publishing (Verlag)
978-3-319-03130-9 (ISBN)
This book examines thermal processing of elemental semiconductors and materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Covers compound semiconductors, dielectric composites and organic materials.
The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
From the Contents: The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.
Erscheint lt. Verlag | 30.12.2013 |
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Reihe/Serie | Springer Series in Materials Science |
Zusatzinfo | XVII, 321 p. 205 illus., 59 illus. in color. |
Verlagsort | Cham |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 648 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
Schlagworte | Activation of Dopants • Annealing by Swift Heavy Ions • Epitaxial Growth of Silicon • Explosive Crystallisation • Flash Lamp Annealing • Pulsed Laser Annealing • Radiation Thermometry • Sub-second Annealing • Thermal Processing of Materials • Thermal Spike-induced Nanostructuring |
ISBN-10 | 3-319-03130-9 / 3319031309 |
ISBN-13 | 978-3-319-03130-9 / 9783319031309 |
Zustand | Neuware |
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