Characterization of Semiconductor Heterostructures and Nanostructures
Elsevier Science Ltd (Verlag)
978-0-444-53099-8 (ISBN)
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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures.
Edited by Carlo Lamberti, Department of Inorganic, Physical & Materials Chemistry, University of Torino, Italy
1. IntroductionC. Lamberti2. Ab-initio studies of structural and electronic propertiesM. Peressi, A. Baldereschi and S. Baroni3. Electrical and optical properties of heterostructures4. Strain and composition determination in semiconducting heterostructures by high resolution X-ray diffractionC. Ferrari and C. Bocchi5. Transmission Electron Microscopy techniques for imaging and composition evaluation in Semiconductor HeterostructuresL. Lazzarini, L. Nasi and V. Grillo6. Accessing structural and electronic properties of semiconductor nanostructures via photoluminescenceS. Sanguinetti, M. Guzzi and M. Gurioli7. Power dependent cathodoluminescence in III-Nitrides heterostructures: from internal field screening to controlled band gap modulationG. Salviati, L. Lazzarini, N. Armani, F. Rossi and V. Grillo8. Raman SpectroscopyD. Wolverson9. X-ray absorption fine structure spectroscopyF. Boscherini10. Nanostructures in the light of synchrotron radiation: surface sensitive x-ray techniques and anomalous scatteringT. Metzger, J. Eymery, V. Favre-Nicolin, G. Renaud, H. Renevier and T. Schülli11. Grazing Incidence Diffraction Anomalous Fine Structure to study the structural properties of semiconductor nanostructuresM. Grazia Proietti, J. Coraux and H. Renevier12. The Role of Photoemission Spectroscopies in Heterojunction ResearchG. Margaritondo13. EPR of interfaces and nanolayers in semiconductor heterostructuresA. Stesmans and V.V. Afans'ev
| Erscheint lt. Verlag | 3.6.2008 |
|---|---|
| Verlagsort | Oxford |
| Sprache | englisch |
| Maße | 165 x 240 mm |
| Gewicht | 1070 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 0-444-53099-1 / 0444530991 |
| ISBN-13 | 978-0-444-53099-8 / 9780444530998 |
| Zustand | Neuware |
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