Characterization of Semiconductor Heterostructures and Nanostructures -

Characterization of Semiconductor Heterostructures and Nanostructures (eBook)

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2011 | 1. Auflage
496 Seiten
Elsevier Science (Verlag)
978-0-08-055815-8 (ISBN)
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Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional ,chapter is devoted to ,ab initio modeling.

The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: ,the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. ,

The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential ,reference ,in the much broader, and extremely hot, field of Nanotechnology.



- Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures.
- Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field.
- Each chapter starts with a didactic introduction on the technique.
- The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures.
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Front Cover 1
Characterization of Semiconductor Heterostructures and Nanostructures 4
Copyright Page 5
Table of Contents 8
Preface 10
Chapter 1: Introduction: the interdisciplinary nature of nanotechnology and its need to exploit frontier characterization techniques 12
1. The scientific and editorial blow up of nanotechnology in the new millennium 12
2. Heterostructures and nanostructures: definition and applications, from optoelectronics to catalysis 15
3. Dynamic interplay among growth/synthesis techniques, theoretical modeling, and characterization techniques in the design and improvement 17
4. Purposes of the book and chapters layout 18
5. A key example of multidisciplinarity in nanotechnology: the atomically defined –O–Ti–O–T–O– quantum wires guested in ETS-10 titanosilicate 19
References 23
Chapter 2: Ab initio studies of structural and electronic properties 28
1. Introduction 28
2. Basic models 29
3. Computational approach 33
4. Band Offsets 43
5. Designing heterostructures and engineering band offsets 51
6. Localized interface states 54
7. Simulating cross-sectional scanning tunneling microscopy images for characterization 57
8. Semiconductor heterostructures for spintronic applications 58
9. Summary and future perspectives 61
References 62
Chapter 3: Electrical characterization of nanostructures 66
1. Introduction 66
2. Electrical characterization 67
3. Photoinduced electrical characterization 82
4. Case study: electrical characterization of GaN nanowires 90
5. Summary and future development 100
Acknowledgments 100
References 100
Chapter 4: Strain and composition determination in semiconducting heterostructures by high-resolution X-ray diffraction 104
1. Introduction 105
2. Lattice-mismatched and pseudomorphic heterostructures 105
3. X-ray diffraction profiles of semiconducting heterostructures 109
4. Determination of the composition of a semiconducting alloy heterostructures 119
5. Strain release in semiconducting material heterostructures 122
6. Experimental results 127
7. Strain determination in zero-dimensional heterostructures 131
8. Summary and future perspectives 140
References 140
Chapter 5: Transmission electron microscopy techniques for imaging and compositional evaluation in semiconductor heterostructures 144
1. Introduction 144
2. Experimental: basics of the electron microscope 145
3. Diffraction contrast in TEM images 149
4. Phase contrast 160
5. Other techniques 168
6. Application of the TEM technique to semiconductor heterostructures 171
Appendix: Simulation of TEM images 180
References 183
Chapter 6: Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 186
1. Introduction 186
2. Experimental systems and techniques 188
3. Electronic and optical properties of quantum structures 191
4. Photoluminescence characterization of quantum wells 205
5. Summary 215
References 216
Chapter 7: Power-dependent cathodoluminescence in III–nitrides heterostructures: from internal field screening to controlled band-gap modulation 220
1. Short introduction to cathodoluminescence spectroscopy 220
2. Cathodoluminescence on III–nitrides heterostructures 235
3. Power-dependent cathodoluminescence: three examples 239
4. Conclusions 250
Acknowledgments 251
Appendix: “ALLES” software for the simulation of CL processes in semiconductors 251
References 256
Chapter 8: Raman spectroscopy 260
1. Introduction 260
2. Experimental methods 269
3. Applications 274
4. Summary and future perspectives 295
Acknowledgements 296
References 296
Chapter 9: X-ray absorption fine structure in the study of semiconductor heterostructures and nanostructures 300
1. Introduction to X-ray absorption spectroscopy for local structural studies 300
2. Detection schemes and experimental setups relevant for semiconductor research 310
3. A review of the use of XAFS in the field of semiconductor heterostructures and nanostructures 317
4. Summary and perspectives 335
Acknowledgments 336
References 337
Chapter 10: Nanostructures in the light of synchrotron radiation: surface-sensitive X-ray techniques and anomalous scattering 342
1. Introduction 342
2. Scientific background for grazing incidence X-ray techniques on nanostructures 344
3. Application of grazing incidence techniques 355
4. Summary and future perspective 377
References 378
Chapter 11: Grazing incidence diffraction anomalous fine structure in the study of structural properties of nanostructures 382
1. Introduction 382
2. Basic Principles 384
3. Experimental setup 393
4. Data analysis 395
5. Applications to semiconductor nanostructures 398
6. Summary and perspectives 412
Acknowledgments 413
References 413
Chapter 12: The role of photoemission spectroscopies in heterojunction research 418
1. Introduction 418
2. Angle-resolved photoemission 428
3. Local chemical analysis 430
4. Photoemission spectromicroscopy 432
5. Case studies 434
6. Summary and conclusions 443
References 443
Chapter 13: ESR of interfaces and nanolayers in semiconductor heterostructures 446
1. Introduction 446
2. ESR technique 450
3. Probing semiconductor/insulator interfaces through inherent point defects 462
4. Paramagnetic defects in dielectric layers 484
5. Summary and future perspectives 488
References 489
Subject Index 494
Colour Plates 498

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eReader: Dieses eBook kann mit (fast) allen eBook-Readern gelesen werden. Mit dem amazon-Kindle ist es aber nicht kompatibel.
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