Nanometer CMOS ICs
Springer International Publishing (Verlag)
978-3-031-64248-7 (ISBN)
This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 3nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design, fabrication and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, Infineon, TSMC, etc., courseware, which, to date, has been completed by more than 7000 engineers working in a large variety of the above mentioned disciplines.
Harry Veendrick graduated from the Technical University Eindhoven, the Netherlands, in 1977. In the same year he joined Philips Research Laboratories, also in Eindhoven, where he has been involved in the design of memories, gate arrays and complex digital video-signal processors. He holds 30 US and many more European patents in the area of CMOS circuit design. He is the (co-)author of more than 30 publications on robust, high-performance and low-power CMOS IC design. In this respect, he has contributed to many conferences and workshops, as reviewer, speaker, invited speaker, panelist, organizer, guest editor and program committee member. In addition, he is the author of MOS ICs (VCH 1992), Deep-Submicron CMOS ICs, from Basics to ASICs (Kluwer Academic Publishers: 1-st edition 1998, 2-nd edition 2000) and Nanometer CMOS ICs, from Basics to ASICs (Springer: 1-st edition June 2008, 2-nd edition 2017 and 3-rd edition 2024). He is a co-author of Low-Power Electronics Design (CRCPress, 2004). His principle research interests included the design of low-power and high-speed complex digital CMOS circuits, with an emphasis on nanometer-scale physical effects and scaling aspects. From 2002 to 2009 he has been project leader of the Deep-Submicron/Nanometer CMOS Electrical Design Cluster within the Mixed-Signal Circuits and Systems research group at NXP Semiconductors, which is the 2006 spin-off of the former Philips Semiconductors business. Complementary to this is his interest in IC technology, which allowed him to act as an interface between digital IC design and IC process technology. From 1980 onwards, next to his research activities, he has been actively involved in the training of more than 7000 semiconductor design, process, test, product, and CAD tools engineers. In 2002 he received the PhD degree in electronic engineering from the Technical University of Eindhoven, The Netherlands. He was a Research Fellow at Philips Research Laboratories and NXP Research and has been a Visiting Professor to the Department of Electronic and Electrical Engineering of the University of Strathclyde, Glasgow, Scotland, UK. In May 2009 he has left NXP Research and started his own training activity teaching 1-day, 3-day and 5-day courses for different target audiences (www.bitsonchips.com).
Chapter 1 Basic Principles.- Chapter 2 Geometrical, physical and field-scaling impact on MOS transistor behaviour.- Chapter 3 Manufacture of MOS devices.- Chapter 4 CMOS circuit, layout and library design.- Chapter 5 Special circuits, devices and technologies.- Chapter 6 Memories.- Chapter 7 Very Large Scale Integration (VLSI) and ASICs.- Chapter 8 Less power, a hot topic in IC design.- Chapter 9 Robustness of nanometer CMOS designs: signal integrity, variability and reliability.- Chapter 10 Testing, yield, packaging, debug and failure analysis.- Chapter 11 Effects of scaling on MOS IC design and consequences for the roadmap.
| Erscheinungsdatum | 23.10.2024 |
|---|---|
| Zusatzinfo | XLII, 664 p. 472 illus., 297 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 178 x 254 mm |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | Basic CMOS physics • CMOS Integrated Circuit Design • CMOS nanoelectronics • CMOS Packaging and Failure Analysis • CMOS Reliability and Signal Integrity • CMOS scaling trends and cost • CMOS Testing and Yield • CMOS VLSI design • CMOS VLSI Design textbook • Low-power CMOS design • Nanometer CMOS Integrated Circuits • Nanometer CMOS process and design |
| ISBN-10 | 3-031-64248-1 / 3031642481 |
| ISBN-13 | 978-3-031-64248-7 / 9783031642487 |
| Zustand | Neuware |
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