Thermo-mechanische und mikrostrukturelle Charakterisierung von Kupfer-Durchkontaktierungen im Silizium (Through Silicon Vias)
GRIN Publishing (Verlag)
978-3-668-21138-4 (ISBN)
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wissenschaftliche Veröffentlichungen:Konferenzbeiträge:2014P. Saettler, M. Hecker, M. Boettcher, C. Rudolph, and K. J. Wolter, "TSV-Annealing : A thermo-mechanical assessment," in Electronics System-Integration Technology Conference (ESTC), 2014, pp. 1-6.2013P. Saettler, M. Boettcher, C. Rudolph, and K. J. Wolter, "Bath chemistry and copper overburden as influencing factors of the TSV annealing," in Proceedings - Electronic Components and Technology Conference, 2013, pp. 1753-1758.P. Saettler, M. Boettcher, and K. J. Wolter, "µ-Raman spectroscopy and FE-analysis of thermo-mechanical stresses in TSV periphery," in 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013, 2013, pp. 1-7.2012P. Saettler, M. Boettcher, and K. J. Wolter, "Characterization of the annealing behavior for copper-filled TSVs," in Proceedings - Electronic Components and Technology Conference, 2012, pp. 619-624.P. Saettler, D. Kovalenko, K. Meier, M. Roellig, M. Boettcher, and K. J. Wolter, "Thermo-mechanical characterization and modeling of TSV annealing behavior," in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012, 2012, pp. 1/6-6/6.2011P. Saettler, K. Meier, and K. J. Wolter, "Considering copper anisotropy for advanced TSV-modeling," in Proceedings of the International Spring Seminar on Electronics Technology, 2011, pp. 419-423.Fachzeitschriften:2015P. Saettler, M. Hecker, M. Boettcher, C. Rudolph, and K. J. Wolter, "µ-Raman Spectroscopy and FE-Modeling for TSV-Stress-Characterization," Microelectron. Eng., pp. 1-7, 2015.2013P. Saettler, M. Boettcher, C. Rudolph, and K.-J. Wolter, "Thermo-mechanische Charakterisierung des TSV-Annealing," Produktion von Leiterplatten und Syst., no. 7, pp. 1498-1507, 2013.
Erscheinungsdatum | 22.07.2016 |
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Sprache | deutsch |
Maße | 148 x 210 mm |
Gewicht | 229 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | 3D integration • DRIE • EBSD • Elektrotechnik • FEM • Halbleitertechnik • Mikrosystemtechnik • Raman • Through Silicon Via • TSV |
ISBN-10 | 3-668-21138-8 / 3668211388 |
ISBN-13 | 978-3-668-21138-4 / 9783668211384 |
Zustand | Neuware |
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