Rapid Thermal Processing of Semiconductors
Seiten
2013
|
Softcover reprint of the original 1st ed. 1997
Springer-Verlag New York Inc.
978-1-4899-1806-2 (ISBN)
Springer-Verlag New York Inc.
978-1-4899-1806-2 (ISBN)
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
1. Transient Heating of Semiconductors by Radiation.- 2. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals.- 3. Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon.- 4. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors.- 5. Diffusion Synthesis of Silicides in Thin-Film Metal—Silicon Structures.- 6. Rapid Thermal Oxidation and Nitridation.- 7. Rapid Thermal Chemical Vapor Deposition.- References.
| Reihe/Serie | Microdevices |
|---|---|
| Zusatzinfo | XXII, 358 p. |
| Verlagsort | New York |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| ISBN-10 | 1-4899-1806-X / 148991806X |
| ISBN-13 | 978-1-4899-1806-2 / 9781489918062 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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