Low Power and Reliable SRAM Memory Cell and Array Design -

Low Power and Reliable SRAM Memory Cell and Array Design

Buch | Softcover
XII, 144 Seiten
2013 | 2011
Springer Berlin (Verlag)
978-3-642-27018-5 (ISBN)
119,99 inkl. MwSt
The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

lt;p>Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Erscheint lt. Verlag 27.11.2013
Reihe/Serie Springer Series in Advanced Microelectronics
Zusatzinfo XII, 144 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 247 g
Themenwelt Technik Elektrotechnik / Energietechnik
Schlagworte CMOS LSI • memory cell • Reliability • SRAM • Study
ISBN-10 3-642-27018-2 / 3642270182
ISBN-13 978-3-642-27018-5 / 9783642270185
Zustand Neuware
Haben Sie eine Frage zum Produkt?
Mehr entdecken
aus dem Bereich
Wegweiser für Elektrofachkräfte

von Gerhard Kiefer; Herbert Schmolke; Karsten Callondann

Buch | Hardcover (2024)
VDE VERLAG
48,00