Low Power and Reliable SRAM Memory Cell and Array Design
Seiten
2011
|
2011
Springer Berlin (Verlag)
978-3-642-19567-9 (ISBN)
Springer Berlin (Verlag)
978-3-642-19567-9 (ISBN)
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
lt;p>Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies
| Erscheint lt. Verlag | 18.8.2011 |
|---|---|
| Reihe/Serie | Springer Series in Advanced Microelectronics |
| Zusatzinfo | XII, 144 p. |
| Verlagsort | Berlin |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 370 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | CMOS LSI • CMOS-Schaltungen • memory cell • Reliability • SRAM • SRAM (Static Random Access Memory) • Study |
| ISBN-10 | 3-642-19567-9 / 3642195679 |
| ISBN-13 | 978-3-642-19567-9 / 9783642195679 |
| Zustand | Neuware |
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