High Brightness Light Emitting Diodes (eBook)

Front Cover 1
High Brightness Light Emitting Diodes 4
Copyright Page 5
Contents 6
List of Contributors 12
Preface 14
Chapter 1. Materials Issues in High-Brightness Light-Emitting Diodes 16
I. Introduction 16
II. Techniques for Production of III–V Semiconductors for Light-Emitting Diodes 20
III. Selection of Materials for High-Brightness Light-Emitting Diodes 27
IV. Fundamental Thermodynamicand Kinetic Considerations 32
V. Specific Materials Systems 48
VI. Conclusions 55
References 56
Chapter 2. Overview of Device Issues in High-Brightness Light-Emitting Diodes 62
I. Introduction 62
II. Light-Emitting Diode Device Issues 65
III. Technology Status and Future Potential 73
References 78
Chapter 3. AlGaAs Red Light-Emitting Diodes 80
I. Introduction 80
II. Device Design 83
III. Crystal Growth 89
IV. Device Fabrication 94
V. Comparison with Other Types of Red Light-Emitting Diodes 96
VI. Temperature-Dependent Properties 98
VII. Reliability Characteristics. 104
References 110
Chapter 4. OMVPE Growth of AlGaInP for High-Efficiency Visible Light-Emitting Diodes 112
I. Introduction 112
II. General Overview of Organometallic Vapor-Phase Epitaxy of AlGaInP 114
III. Organometallic Vapor-Phase Epitaxy of AlGaInP—Critical Issues 127
IV. High-Volume Manufacturing Issues 151
V. Summary 159
References 159
Chapter 5. AlGaInP Light-Emitting Diodes 164
I. Introduction 164
II. Active Layer Design 168
III. Current-Spreading in Device Structures 185
IV. Current-Blocking Structures 193
V. Light Extraction 195
VI. Wafer Fabrication Techniques 221
VII. Device Performance Characteristics 223
VIII. Conclusions and Outlook. 234
References 235
Chapter 6. Applications for High-Brightness Light-Emitting Diodes 246
I. Introduction 247
II. Photometry and Color Measurement Principles 249
III. Automotive Signal Lighting 270
IV. Automotive Interior Lighting. 296
V. Traffic Signal Lights 315
VI. Large-Area Displays 338
VII. Liquid Crystal Display Backlighting 356
References 375
Chapter 7. Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes 376
I. Introduction 376
II. Historical Overview 378
III. Design and Structure of Nitride-Based Superbright Light-Emitting 398
IV. Efficiency, Wavelength, and Lifetime 403
V. Laser Diodes 404
VI. Summary 406
References 407
Chapter 8. Group III–V Nitride-Based Ultraviolet Blue-Green-Yellow Light-Emitting Diodes and Laser Diodes 410
I. Introduction 410
II. Gallium Nitride Growth 413
III. InGaN Growth 428
IV. Light-Emitting Diodes 435
V. InGaN Multiple Quantum Well Structure Laser Diodes 455
VI. Summary 459
References 460
Index 464
Contents of Volumes in this Series 474