Semiconductor Materials for Optoelectronics and LTMBE Materials

Part 1 Symposium A on semiconductor materials for optoelectronic devices, OEICs and photonics: epitaxy for optoelectronic applications; quantum size structures; optoelectronic devices; strained and mismatched structures; interdiffusion and ion implantation; new devices and integration of devices; optoelectronics on silicon; bulk III-V crystals and new optoelectronic materials. Part 2 Symposium B on low temperature molecular beam epitaxial III-V materials - physics and applications: LTMBE GaAs - present status and perspectives, G.L. Witt; point defects in III-V materials grown by molecular beam epitaxy at low temperature, P. Hautojarvi et al; GaAs, AlGaAs and InGaAs epilayers containing As clusters - semimetal/semiconductor composites, M.R. Melloch et al; extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP, A. Claverie and Z. Liliental-Weber; optoelectronic applications of LTMBE III-V materials at a low temperature by molecular beam epitaxy, U.K. Mishra.