Semiconductor Materials for Optoelectronics and LTMBE Materials (eBook)

Front Cover 1
Semiconductor Materials for Optoelectronics and Ltmbe Materials 4
Copyright Page 5
Table of Contents 6
Preface 14
Organizers and Sponsors 15
Part I: Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics 12
Chapter 1. Stoichiometry of III-V compounds 16
Abstract 16
1. Introduction 16
2. Annealing effects on GaAs crystals under As vapour pressure 17
3. Liquid phase epitaxial growth by the temperature difference method under controlled vapour pressure 20
4. Surface treatment before regrowth of GaAs by molecular layer epitaxy and its association with the surface stoichiometry 21
5. Interstitial As atoms in GaAs 22
6. GaAs bulk crystal growth by the vapour-pressurecontrolled Czochralski (PCZ) method 24
7. GaAs bulk crystal grown by the vapourpressure- controlled float zone method 25
8. InP bulk crystal growth by the vapour-pressurecontrolled zone-melting method 26
9. GaP pure green LED without nitrogen doping 26
10. GaAlAs very bright LED 26
11. Theoretical consideration of stoichiometry control through solution 27
12. Summary 27
References 28
Chapter 2. Evaluation of III-V growth technologies for optoelectronic applications 29
Abstract 29
1. Introduction 29
2. Application fields of the growth technologies 29
3. Integration of technologies 35
4. Conclusion 36
References 37
Chapter 3. Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD 39
Abstract 39
1. Introduction 39
2. Experimental conditions 40
3. Selective-area epitaxy 40
4. Non-planar epitaxy 47
5. Device applications 50
6. Conclusions 54
Acknowledgments 55
References 55
Chapter 4. ESPRIT MORSE: research for novel metal-organic precursors 56
Abstract 56
1. Introduction 56
2. Novel aluminum precursors 56
3. Novel indium precursors 58
4. Novel phosphorus precursors 58
5. Novel arsenic precursors 59
6. Device results 60
7. Summary and outlook 60
Acknowledgment 61
References 61
Chapter 5. MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates 62
Abstract 62
1. Introduction 62
2. MBE regrowth on dry etched surfaces 62
3. Direct growth of nanostructures 63
4. Regrowth on shallow etched structures 64
5. Summary 64
Acknowledgment 65
References 65
Chapter 6. Improved method for GaAs-(Ga,Al)As epitaxial regrowth 66
Abstract 66
1. Introduction 66
2. Experimental details 66
3. Results and discussion 67
4. Conclusions 68
Acknowledgements 69
References 69
Chapter 7. Investigation of MOVPE-grown In0 53Ga047As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry 70
Abstract 70
1. Introduction 70
2. Experimental set-up 71
3. Results and discussion 71
4. Conclusions 73
References 73
Chapter 8. Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane 74
Abstract 74
1. Introduction 74
2. Thermal decomposition of TBP and BPE 74
3. Growth and characterization of InP layers 75
4. Conclusions 76
Acknowledgments 77
References 77
Chapter 9. Optical characterization of extremely high purity ZnSe grown by metal-organic vapour phase epitaxy using dimethylzinc-triethylamine adduct 78
Abstract 78
1. Introduction 78
2. Experimental details 79
3. Results 79
4. Conclusion 81
Acknowledgment 81
References 82
Chapter 10. Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0. 
83 
Abstract 83
1. Introduction 83
2. MBE-growth 83
3. Spectroscopic ellipsometry 84
4. Conclusions 85
References 85
Chapter 11. Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates 86
Abstract 86
1. Introduction 86
2. Experimental details 86
3. Fitting procedure 87
4. Results and discussion 87
5. Conclusions 88
Acknowledgments 88
References 88
Chapter 12. Effects of deep levels and Si-doping on GalnP material properties investigated by means of optical methods 90
Abstract 90
1. Introduction 90
2. Experimental details 90
3. Results and discussion 91
4. Conclusions 92
Acknowledgment 93
References 93
Chapter 13. Optical properties of GaSb-AlSb heterostructures grown by molecular beam epitaxy 94
Abstract 94
1. Introduction 94
2. Experimental details 94
3. Homoepitaxy 94
4. GaSb-AlSb multiple quantum well on GaAs substrate 95
5. (Al)GaSb-AlSb Bragg mirror on GaAs substrate 96
6. Conclusion 97
References 97
Chapter 14. Absorption coefficient and exciton oscillator strengths in InGaAs/InP multi-quantum wells 98
Abstract 98
1. Introduction 98
2. Experimental details 98
3. Results and discussion 99
4. Conclusions 101
Acknowledgments 102
References 102
Chapter 15. MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures 103
Abstract 103
1. Introduction 103
2. MBE growth procedure 103
3. Characteristics of Al(Ga)InAs layers 103
4. Interface properties of Al(Ga)InAs/GaInAs heterojunctions 104
5. Optical quality of Al(Ga)In As/Gain As quantum well structures 104
6. Summary 106
Acknowledgment 106
References 106
Chapter 16. Influence of the cap layer thickness on the optical properties of near surface GalnAs/GaAs quantum wells 107
Abstract 107
References 109
Chapter 17. Intersubband transitions in InAs/AlSb quantum wells 110
Abstract 110
Acknowledgments 112
References 112
Chapter 18. Blue diode lasers and visible optoelectronic devices 114
Abstract 114
1. Introduction 114
2. Doping of ZnSe 114
3. Quantum well structures 115
4. Light emitting diodes 115
5. Laser diodes 116
6. Optoelectronic devices 117
7. Conclusions 118
Acknowledgments 118
References 118
Chapter 19. Aluminium-free 980 nm laser diodes 120
Abstract 120
1. Introduction 120
2. Layer structures 120
3. Laser diodes 122
4. Very high power lasers 124
Acknowledgments 125
References 125
Chapter 20. Shadow mask MBE for the fabrication of lead chalcogenide buried heterostructure lasers 126
Abstract 126
1. Introduction 126
2. Technology 126
3. Results 128
4. Conclusions 130
References 132
Acknowledgments 132
Chapter 21. Quantum confined Stark effect (QCSE) and self-electro-optic effect device (SEED) in II-VI heterostructures 133
Abstract 133
1. Introduction 133
2. Experiments and device specifications 133
3. The quantum confined Stark effect 134
4. Self-electro-optic effect device 135
5. Conclusion 136
Acknowledgments 136
References 136
Chapter 22. Growth of InAlGaAs multilayer structures for high power and submilliamp vertical cavity lasers 137
Abstract 137
1. Introduction 137
2. Growth of epitaxial layers and device processing 137
3. VCSEL characteristics 138
4. Short wavelength InAlGaAs quantum well laser diodes 139
5. Conclusion 139
Acknowledgement 140
References 140
Chapter 23. p-Dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers 141
Abstract 141
1. Introduction 141
2. Epitaxial layer structures 141
3. Laser fabrication and characterization 142
4. Gain spectra 144
5. Conclusions 145
Acknowledgments 145
References 145
Chapter 24. Experimental and theoretical studies of multi-quantum well structures for unipolar avalanche multiplication 146
Abstract 146
1. Introduction 146
2. Experimental results and discussion 146
3. Theoretical background 148
References 149
Chapter 25. Lateral thickness modulations in alternate tensile–compressive strained GalnAsP multilayers grown by gas source molecular beam epitaxy 150
Abstract 150
1. Introduction 150
2. Experimental details 150
3. Results 151
4. Discussion 151
5. Conclusions 152
References 152
Chapter 26. Growth and characterization of In0.53Ga0A1Asl/nxGdLX _ xAs strained-layer superlattices 153
Abstract 153
1. Introduction 153
2. Growth technique and corresponding results 154
3. Computational results 155
4. Optical data 156
5. Conclusion 157
References 157
Chapter 27. Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices 158
Abstract 158
1. Introduction 158
2. Experimental details 158
3. Results and discussion 159
4. Summary 161
Acknowledgments 161
References 161
Chapter 28. Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells 162
Abstract 162
1. Introduction 162
Acknowledgments 165
References 165
Chapter 29. Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs(001), InP(001) and GaSb(001) by metal–organic vapor phase epitaxy 166
Abstract 166
1. Introduction 166
2. Experimental details 167
3. Results and discussion 167
4. Conclusion 169
References 170
Chapter 30. Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells 171
Abstract 171
Acknowledgments 174
References 174
Chapter 31. Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE 175
Abstract 175
1. Introduction 175
2. Experimental details 175
3. Results and discussion 176
4. Summary 177
Acknowledgments 178
References 178
Chapter 32. Characterization of the heterostructure between heteroepitaxially grown ß-FeSi2 and (111) silicon 179
Abstract 179
1. Introduction 179
2. Sample preparation 179
3. Characterization of the ß-FeSi2-silicon heterostructure 180
4. Electrical properties of the heteroepitaxially grown ß-FeSi2 film 181
5. Electrical characterization of the ß-FeSi2/Si heterostructure 182
6. Summary and conclusions 182
References 182
Chapter 33. Optical investigation of interdiffusion in CdTe/CdMnTe quantum wells 183
Abstract 183
References 185
Chapter 34. Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysis 186
Abstract 186
1. Introduction 186
References 189
Chapter 35. Vacancy controlled interdiffusion in III-V heterostructures 190
Abstract 190
1. Introduction 190
2. Experimental method 190
3. Results and discussion 191
4. Conclusions 192
Acknowledgements 192
References 192
Chapter 36. Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaA1As quantum well created by masked ion implantation 193
Abstract 193
1. Introduction 193
2. Point response function 193
3. Two-dimensional distribution 194
4. Heterointerface mixing by ion implantation 194
5. Conclusion 196
Acknowledgments 196
References 196
Chapter 37. Strained InAs/AlxGa0.48 heterostructures: a tunable quantum well materials system for light emission from the near-IR to the mid-IR 197
Abstract 197
1. Introduction 197
2. Growth procedure 198
3. Spontaneous emission 198
4. Stimulated emission 200
5. Conclusion 200
Acknowledgments 201
References 201
Chapter 38. Chemical beam epitaxy and photoluminescence characteristics of InGaAsP/InP BRAQWET modulators 202
Abstract 202
1. Introduction 202
2. CBE Growth 202
3. Photoluminescence measurements under bias voltage 203
4. Optical properties 204
5. Conclusion 204
References 204
Chapter 39. Second harmonic generation via excitations between valence sub-bands in p-type GaAs-AlAs and Si-SiGe quantum well structures 205
Abstract 205
1. Introduction 205
2. Theory 205
3. Results 206
4. Conclusions 208
Acknowledgments 208
References 208
Chapter 40. An AlGaAs/GaAs OEIC structure for the integration of LEDs, MESFETs and photodetectors 209
Abstract 209
1. Introduction 209
2. Layer structure 209
3. Simulation 210
4. Discussion and conclusions 211
References 212
Chapter 41. AlGalnP/GalnAs/GaAs MODFET devices: candidates for optoelectronic integrated circuits 213
Abstract 213
1. Introduction 213
2. Device fabrication 213
3. Results and discussion 214
4. Conclusions 215
Acknowledgment 215
References 215
Chapter 42. Photoluminescence and electroluminescence processes in Si1 _xGex/Si heterostructures grown by chemical vapor deposition 216
Abstract 216
1. Introduction 216
2. Rapid thermal chemical vapor deposition 216
3. Photoluminescence 217
4. Electroluminescence 218
5. Future directions 219
6. Summary 220
Acknowledgments 220
References 220
Chapter 43. Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures 221
Abstract 221
Acknowledgments 224
References 224
Chapter 44. A study of PbSe heteroepitaxy on Si( 111) for IR optoelectronic applications 226
Abstract 226
1. Introduction 226
2. Structural properties of (Ba,Ca)F2 buffer layers 226
3. Structural and electrical properties of PbSe active layers 227
4. Preliminary device results 229
5. Conclusions 229
Acknowledgments 229
References 229
Chapter 45. Optical cross-sections and distribution of Fe2+ and Fe3+ in semiinsulating liquid encapsulated Czochralski grown InP:Fe 230
Abstract 230
1. Introduction 230
2. Crystal growth and preparation 230
3. Evaluation of optical cross-sections 230
4. Fe2+ and Fe3+ distribution in comparison with resistivity mapping 231
5. Summary 233
Acknowledgment 233
References 233
Chapter 46. Large negative persistent photoconductivity of bulk GaAs1 _ xPX (x = 0.02–0.03) single crystals 234
Abstract 234
1. Introduction 234
2. Crystal growth 235
3. Experimental results 235
4. Discussion 236
5. Conclusions 237
Acknowledgments 237
References 237
Chapter 47. Synthetic diamond: the optical band at 1.883 eV 238
Abstract 238
1. Introduction 238
2. Experimental details 238
3. Results and discussion 238
4. Summary 241
Acknowledgments 241
References 241
Chapter 48. Optical and transport properties in the electro-optical material CdIn2Te4 242
Abstract 242
1. Introduction 242
2. Experimental procedure 242
3. Optical and electrical properties 242
4. Discussion 244
5. Conclusion 245
Acknowledgments 245
References 245
Author Index of Volume 21, Issues 2–3 247
Subject Index of Volume 21, Issues 2–3 249
Part II: Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications 256
Preface 258
Organizers and Sponsors 259
Chapter 49. Basic principles governing the surface atomic structure of zinc blende semiconductors 260
Abstract 260
1. Introduction 260
2. The nature of ó,p and dangling bonds 260
3. First set of rules 261
4. Results for covalent surfaces 262
5. Further rules for compound zinc blende semiconductors 263
6. Non-polar (110) surfaces 264
7. Polar surfaces 264
References 266
8. Conclusions 266
Chapter 50. LTMBE GaAs: present status and perspectives 268
Abstract 268
1. Background 268
2. Basic features of LTMBE GaAs 268
3. Models for LT MBE GaAs 269
4. The effects of growth and annealing conditions 270
5. Optical properties 271
6. Extensions of LT growth to other materials 271
7. Electronic applications of LT GaAs 272
8. Concluding remarks 273
Acknowledgments 273
References 273
Chapter 51. Point defects in III-V materials grown by molecular beam epitaxy at low temperature 275
Abstract 275
1. Introduction 275
2. Point defects in LT GaAs 275
3. Point defects in LT InP 276
4. Positron annihilation technique 276
5. Results on LT MBE GaAs 277
6. Results on LT MBE InP 279
7. Summary 280
Acknowledgments 280
References 280
Chapter 52. Gallium vacancy related defects in silicon doped GaAs grown at low temperatures 282
Abstract 282
1. Introduction 282
2. Experiment 282
3. Results 283
4. Discussion 284
Acknowledgment 284
References 284
Chapter 53. EL2-like defects in low temperature GaAs 286
Abstract 286
1. Introduction 286
2. Samples 286
3. Optical experiments 286
4. X-ray experiments 287
5. Discussion 288
References 288
Chapter 54. GaAs, AlGaAs, and InGaAs epilayers containing As clusters: semimetal/semiconductor composites 290
Abstract 290
1. Introduction 290
2. Composite formation 290
3. Cluster formation at heterojunctions 291
4. Controlling cluster formation with doping 293
5. Conclusions 294
Acknowledgment 294
References 294
Chapter 55. Semi-insulating GaAs made by As implantation and thermal annealing 296
Abstract 296
1. Introduction 296
2. General procedure 297
3. Formation and crystallography of the precipitates 297
4. Electrical characteristics 298
5. Epilayer growth on As-implanted substrates 298
6. Conclusions 298
Acknowledgments 299
References 299
Chapter 56. Electro-optical measurement of low temperature GaAs 300
Abstract 300
1. Introduction 300
2. The samples 300
3. Results and discussion 300
4. Conclusions 302
Acknowledgments 303
References 303
Chapter 57. Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP 304
Abstract 304
1. Introduction 304
2. LT-GaAs 304
3. LT-InAlAs 309
4. LT-InP 310
5. Conclusions 312
Acknowledgments 312
References 313
Chapter 58. Interfacial barrier characteristics of LT-GaAs on low doped GaAs layers 314
Abstract 314
1. Introduction 314
2. Method and experimental procedure 314
3. Device fabrication 315
4. Results 315
5. Discussion and conclusion 318
Acknowledgments 319
References 319
Chapter 59. Optoelectronic applications of LTMBE III-V materials 320
Abstract 320
1. Introduction 320
2. Ultrashort carrier lifetime 321
3. LT-GaAs photodetectors and photoswitches 322
4. Low-temperature-grown InxGa1-xAs 324
5. Conclusions 325
Acknowledgments 325
References 325
Chapter 60. Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling 327
Abstract 327
1. Introduction 327
2. Reflective electro-optic sampling 327
3. Electric field and carrier dynamics 328
4. Carrier lifetime in trapped states 328
5. Coherent LO phonon dynamics 329
6. Conclusions 329
References 329
Chapter 61. Applications of GaAs grown at a low temperature by molecular beam epitaxy 331
Abstract 331
1. Electronic materials properties 331
2. Applications 333
3. Microwave power MESFET 334
4. Conclusion 335
Acknowledgments 336
References 336
Chapter 62. Temperature measurements of LT GaAs diodes 337
Abstract 337
1. Introduction 337
2. Material growth 337
3. Metal-insulator-semiconductor diode fabrication and measurements 338
4. Discussion 338
5. Conclusion 339
Acknowledgment 339
References 339
Chapter 63. Noise studies of HFETs on low temperature grown GaAs buffers and of MESFETs with low temperature grown GaAs passivation 341
Abstract 341
1. Introduction 341
2. Low-frequency noise in HFETs 341
3. Phase noise in MESFETs 342
4. Channel noise 343
5. Conclusion 344
References 344
Chapter 64. Electrical conduction in low temperature grown InP 345
Abstract 345
1. Introduction 345
2. Material 345
3. Results 346
4. Discussion 346
5. Conclusions 346
References 347
Chapter 65. Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures 348
Abstract 348
1. Introduction 348
2. Molecular beam epitaxy growth procedure 348
3. Electrical characteristics of LT-Al(Ga)InAs 348
4. Doping behaviour of LT-AllnAs: Si 349
5. Deep levels in LT-Al(Ga)InAs 349
6. Annealing behaviour of LT-Al(Ga)InAs 350
7. Application of LT-AlInAs to high electron mobility transistor structures 350
8. Summary 351
Acknowledgment 351
References 351
Chapter 66. Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy 352
Abstract 352
1. Introduction 352
2. Experimental details 352
3. Results and discussion 353
4. Conclusion 355
Acknowledgments 355
References 355
Chapter 67. Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures 356
Abstract 356
1. Introduction 356
2. Experimental conditions 356
3. Results 357
4. Discussion 359
5. Conclusion 360
Acknowledgments 360
References 360
Author Index of Volume 22, Number 1 362
Subject Index of Volume 22, Number 1 363