III-V Microelectronics (eBook)

Front Cover 1
III–V Microelectronics 4
Copyright Page 5
Table of Contents 8
Preface 6
Chapter 1. Basic Physical mechanisms 10
Abstract 10
1. BASIC PROPERTIES 10
2. BOLTZMANN EQUATION 27
3. MONTE CARLO SIMULATIONS 42
4. NON STEADY-STATE TRANSPORT 56
5. CONCLUSION 62
REFERENCES 62
Chapter 2. Epitaxy of wide band gap III-V materials by MOVPE and MBE 66
Abstract 66
1. INTRODUCTION 66
2. BASIC PRINCIPLES OF MOLECULAR BEAM EPITAXY (MBE) 67
3. BASIC PRINCIPLES OF METALORGANIC VAPOR PHASE EPITAXY (MOVPE) 68
4. SAFETY CONSIDERATIONS 70
5.1 GROWTH AND CHARACTERIZATION OF GaAs AND AlGaAs 73
5.2 ELECTRICAL AND OPTICAL PROPERTIES OF AlxGa1-xAs/GaAs HETEROINTERFACES GROWN BY MOVPE 81
6. GROWTH OF GaAs/AlGaAs STRUCTURES IN MULTIWAFE RREACTORS 89
7. CONCLUSION 91
Acknowledgements 92
References 93
CHapter 3. Device simulation 98
Abstract 98
1. INTRODUCTION 98
2. PHYSICAL DEVICE MODELS 100
3. DEVICE SIMULATION 125
4. QUASI-PHYSICAL AND CIRCUIT-ORIENTED MODELS 136
5. CONCLUSIONS 146
References 147
Chapter 4. Characterisation of Mismatched Epitaxial Layers Grown by Metal-Organic Vapour Phase Epitaxy 154
Abstract 154
1. AN INTRODUCTION TO MISMATCHED LAYERS 154
2. STRAIN INDUCED EFFECTS ON THE BAND STRUCTURE 156
3. THE USE OF MISMATCHED LAYERS IN DEVICES 158
4. AN INTRODUCTION TO DISLOCATIONS IN GENERAL 159
5. A THEORETICAL STUDY OF THE ONSET OF THE FORMATION OF MISFIT DISLOCATIONS 164
6. TECHNIQUES TO CHARACTERISE MISMATCHED LAYERS AND TO MEASURE THE CRITICAL THICKNESS 170
7. LOW TEMPERATURE PHOTOLUMINESCENCE 171
8. LOW TEMPERATURE CATHODOLUMINESCENCE IMAGING 172
9. LUMINESCENCE FROM SEMICONDUCTORS 173
10. NON-RADIATIVE RECOMBINATION IN SEMICONDUCTORS 176
11. METAL-ORGANIC VAPOUR PHASE EPITAXY GROWTH OF MISMATCHED LAYERS OF GaAsxP1-x IN BETWEEN GaP 176
12. THE PHOTOLUMINESCENCE STUDY 177
13. THE CATHODOLUMINESCENCE STUDY OF MISMATCHED LAYERS 179
14. SUMMARY 188
15. REFERENCES 188
Chapter 5. Noise in devices: definition, modelling 192
Abstract 192
1. INTRODUCTION 192
2. NOISE: DEFINITIONS AND BASIC PROPERTIES 194
3. NOISE SOURCES 202
4. NOISE IN MATERIALS 209
5. MODELLING NOISE OF DEVICES 218
6. PROBLEMS RELATED TO SUBMICRON DEVICES 234
7. CONCLUSION 242
8. REFERENCES 243
Chapter 6. FIELD EFFECTS TRANSISTORS MODELING AND PERFORMANCE 248
A. BASIC PRINCIPLES AND LOW NOISE APPLICATIONS 248
I. GaAs MESFET : PHYSICAL ANALYSIS AND MAIN LIMITATIONS 248
2. CONVENTIONAL AlxGal-xAs/GaAs MODFET 256
3. InGaAs MODFET FOR LOW NOISE APPLICATIONS 264
4. STATE OF THE ART (1990) 266
B) POWER APPLICATIONS 268
1. BASIC NON LINEAR FET DESCRIPTION 268
2. POWER REQUIREMENTS 270
3. LIMITATIONS OF GaAs MESFET AND CONVENTIONAL HEMT 271
4. MULTIPLE CHANNEL AND PSEUDOMORPHIC HEMTs 272
5. InP MISFET AND DMT 277
6. STATE OF THE ART OF POWER PERFORMANCE 280
CONCLUSION 281
ACKNOWLEDGEMENT 282
REFERENCES 282
Chapter 7. Technology for III/V-Semiconductor HFET Devices 286
1 Introduction 286
2 Material aspects for Heterostructure Field-Effect Transistor (HFET) 288
3 Device technology 302
4 Summary 316
5 Literature 317
Chapter 8. MONOLITHIC INTEGRATED CIRCUIT MODELLING 324
1. Monolithic Microwave Integrated Circuits 324
2. Active Device Modelling 328
3. MESFET Physical Modelling 338
4. Physical Model Validation 342
5. Passive Component Modelling 349
Acknowledgement 360
References 361
Chapter 9. Millimetre-wave devices 364
Abstract 364
1. INTRODUCTION 364
2. BASIC PRINCIPLES OF RF-POWER GENERATION 365
3. GUNN ELEMENT (TRANSFERRED ELECTRON DEVICE) 370
4. IMPATT DIODE 374
5. MITTATT AND TUNNETT DIODE 382
6. PIN-AVALANCHE DIODE 387
7. BARITT DIODE 389
8. DOUBLE-BARRIER AND QWITT DIODE 392
9. DEVICE FABRICATION AND PACKAGING 395
10. RESONATORS 399
11. APPLICATION AND STATE-OF-THE-ART PERFORMANCE 401
12. REFERENCES 408
Chapter 10. Heterojunction bipolar transistors: technology, performance and applications 410
Abstract 410
1. INTRODUCTION 410
2. HBTs FOR HIGH SPEED 412
3. SOME DEVICE PHYSICS 412
4. MATERIAL SYSTEMS 422
5. HBT DEVICES: THE WORLD POSITION 423
6. DESIGN BY MODELLING 424
7. APPLICATIONS FOR SMALL AND MEDIUM SCALE HBTCIRCUITS 427
8. HBTS FOR MICROWAVE POWER 434
9. PERFORMANCE PREDICTIONS FOR PROCESS DEVELOPMENTS 437
10. FUTURE DEVELOPMENTS 439
11. HETEROJUNCTIONS IN SILICON 442
12. CONCLUSIONS 444
ACKNOWLEDGEMENTS 444
REFERENCES 444
Chapter 11. OPTOELECTRONIC AND PHOTONIC INTEGRATED CIRCUITS: Modelling and Technology 448
INTRODUCTION 448
1. MODELLING 449
2. TECHNOLOGY FOR OEIC'S AND PIC'S 478
3. CONCLUSIONS 503
ACKNOWLEDGEMENT 503
REFERENCES 504
Author Index 510
Subject Index 512