Nitride Semiconductor Light-Emitting Diodes (LEDs) -  Jian-Jang Huang,  Hao-Chung Kuo,  Shyh-Chiang Shen

Nitride Semiconductor Light-Emitting Diodes (LEDs) (eBook)

Materials, Technologies and Applications
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2014 | 1. Auflage
650 Seiten
Elsevier Science (Verlag)
978-0-85709-930-3 (ISBN)
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The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations.

Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting.

Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.


  • Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations
  • Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots
  • Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting

The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting

Cover 
1 
Nitride semiconductor light-emitting diodes(LEDs): Materials, technologies and applications 
4 
Copyright 5
Contents 6
Contributor contact details 14
Woodhead Publishing Series in Electronic and Optical Materials 18
Dedication 23
Preface 24
Part I: 
28 
1: 
30 
1.1 Introduction 30
1.2 Molecular beam epitaxial (MBE) growth techniques 31
1.3 Plasmaassisted MBE (PAMBE) growth of nitride epilayers and quantum structures 32
1.4 Nitride nanocolumn (NC) materials 39
1.5 Nitride nanostructures based on NCs 44
1.6 Conclusion 48
1.7 References 48
2: 
54 
2.1 Introduction 54
2.2 MOCVD systems 55
2.3 Planetary reactors 62
2.4 Closecoupled showerhead (CCS) reactors 72
2.5 In situ monitoring systems and growing nitridebased materials 
81 
2.6 Acknowledgements 92
2.7 References 92
3: 
93 
3.1 Introduction 93
3.2 Sapphire substrates 96
3.3 Strained heteroepitaxial growth on sapphire substrates 104
3.4 Epitaxial overgrowth of GaN on sapphire substrates 108
3.5 GaN growth on nonpolar and semipolar surfaces 113
3.6 Future trends 115
3.7 References 116
4: 
126 
4.1 Introduction 126
4.2 An overview of gallium nitride (GaN) on silicon substrates 127
4.3 Silicon overview 128
4.4 Challenges for the growth of GaN on silicon substrates 131
4.5 Bufferlayer strategies 132
4.6 Device technologies 140
4.7 Conclusion 166
4.8 References 166
5: 
171 
5.1 Introduction 171
5.2 Optical transitions of Ce and Eu 
173 
5.3 Chemical composition of representative nitride and oxynitride phosphors 176
5.4 Compounds activated by Eu 177
5.5 Compounds activated by Ce 192
5.6 Features of the crystal structure of nitride and oxynitride phosphors 195
5.7 Features of optical transitions of nitride and oxynitride phosphors 198
5.8 Conclusion and future trends 202
5.9 Acknowledgements 203
5.10 References 203
6: 
208 
6.1 Introduction 208
6.2 GaN-based fl ipchip LEDs and fl ipchip technology 210
6.3 GaN FCLEDs with textured micropillar arrays 212
6.4 GaN FCLEDs with a geometric sapphire shaping structure 218
6.5 GaN thinfi lm photonic crystal (PC) LEDs 225
6.6 PC nanostructures and PC LEDs 227
6.7 Light emission characteristics of GaN PC TFLEDs 232
6.8 Conclusion 238
6.9 References 239
7: Nanostructured LEDs 
243 
7.1 Introduction 243
7.2 General mechanisms for growth of gallium nitride (GaN) related materials 245
7.3 General characterization method 250
7.4 Topdown technique for nanostructured LEDs 252
7.5 Bottomup technique for GaN nanopillar substrates prepared by molecular beam epitaxy 267
7.6 Conclusion 272
7.7 References 272
8: 
277 
8.1 Motivation: limitations of conventional cplane LEDs 277
8.2 Introduction to selected nonpolar and semipolar planes 282
8.3 Challenges in nonpolar and semipolar epitaxial growth 290
8.4 Light extraction for nonpolar and semipolar LEDs 294
8.5 References 297
Part II: 
304 
9: Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs 
306 
9.1 Introduction 306
9.2 Recombination models in LEDs 308
9.3 Thermal rollover in gallium indium nitride (GaInN) LEDs 309
9.4 Auger recombination 311
9.5 Highlevel injection and the asymmetry of carrier concentration and mobility 313
9.6 Noncapture of carriers 317
9.7 Polarization fi elds 318
9.8 Carrier delocalization 318
9.9 Discussion and comparison of droop mechanisms 320
9.10 Methods for overcoming droop 321
9.11 References 325
10: 
328 
10.1 Introduction 328
10.2 Photonic crystal (PC) technology 337
10.3 Improving LED extraction effi ciency through PC surface patterning 345
10.4 PC-enhanced light extraction in P-side up LEDs 349
10.5 Modelling PC-LEDs 353
10.6 P-side up PC-LED performance 382
10.7 PC-enhanced light extraction in N-side up LEDs 389
10.8 Summary 397
10.9 Conclusions 399
10.10 References 400
11: 
402 
11.1 Introduction 402
11.2 Mechanism for plasmoncoupled emission 403
11.3 Fabrication of plasmoncoupled nanostructures 405
11.4 Performance and outlook 410
11.5 Acknowledgements 412
11.6 References 412
12: 
415 
12.1 Lightemitting diodes (LEDS) 415
12.2 Polarization effects in III-nitride LEDs 426
12.3 Current status of III-nitride LEDs 437
12.4 Modern LED designs and enhancements 446
12.5 References 447
13: 
456 
13.1 Introduction 456
13.2 Initial idea for stacked LEDs 457
13.3 Secondgeneration LED stack with inclined sidewalls 459
13.4 Thirdgeneration tightly integrated chipstacking approach 464
13.5 Groupaddressable pixelated micro-LED arrays 470
13.6 Conclusions 473
13.7 References 474
14: 
475 
14.1 Introduction 475
14.2 Reliability testing of nitride LEDs 475
14.3 Evaluation of LED degradation 478
14.4 Degradation mechanisms 481
14.5 Conclusion 486
14.6 References 487
15: 
488 
15.1 Functions of LED chip packaging 488
15.2 Basic structure of LED packaging modules 493
15.3 Processes used in LED packaging 496
15.4 Optical effects of gold wire bonding 500
15.5 Optical effects of phosphor coating 503
15.6 Optical effects of freeform lenses 510
15.7 Thermal design and processing of LED packaging 515
15.8 Conclusion 523
15.9 References 523
Part III: 
530 
16: 
532 
16.1 General lighting applications 532
16.2 LED terminology 534
16.3 Copying traditional lamps? 537
16.4 Freedom of choice 538
16.5 Current and future trends 541
16.6 References 542
17: Ultraviolet LEDs 
544 
17.1 Research background of deep ultraviolet (DUV) LEDs 544
17.2 Growth of low threading dislocation density (TDD) AlN layers on sapphire 549
17.3 Marked increases in internal quantum effi ciency (IQE) 554
17.4 Aluminum gallium nitride (AlGaN)-based DUV-LEDs fabricated on highquality aluminum nitride (AlN) 560
17.5 Increase in electron injection effi ciency (EIE) and light extraction effi ciency (LEE) 568
17.6 Conclusions and future trends 575
17.7 References 577
18: 
580 
18.1 Introduction 580
18.2 High indium (In) content alloys for infrared emitters 581
18.3 Rareearth (RE) doped gallium nitride (GaN) emitters 583
18.4 III-nitride materials for intersubband (ISB) optoelectronics 585
18.5 ISB devices 596
18.6 Conclusions 603
18.7 Acknowledgements 604
18.8 References 604
19: 
613 
19.1 Introduction 613
19.2 Types of LED LCD backlighting units (BLUs) 614
19.3 Technical considerations for optical fi lms and plates 618
19.4 Requirements for LCD BLUs 619
19.5 Advantages and history of LED BLUs 621
19.6 Market trends and technological developments 624
19.7 Optical design 630
19.8 References 640
20: 
642 
20.1 Introduction 642
20.2 Forward lighting 642
20.3 Signal lighting 646
20.4 Human factor issues with LEDs 646
20.5 Energy and environmental issues 650
20.6 Future trends 650
20.7 Sources of further information and advice 651
20.8 Acknowledgments 651
20.9 References 651
Index 654

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Erscheint lt. Verlag 14.2.2014
Sprache englisch
Themenwelt Naturwissenschaften Physik / Astronomie Quantenphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 0-85709-930-2 / 0857099302
ISBN-13 978-0-85709-930-3 / 9780857099303
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