Atomic Layer Deposition for Semiconductors (eBook)

 Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.

I.Introduction
Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)

II.Fundamentals
Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)
Chapter 3 . ALD simulations; Simon Elliott (Tyndall)

III.ALD for memory devices
Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,
Seong Keun Kim, and Sang Woon Lee (SNU)

III-2. ALD for emerging memories
Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)
Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)

IV.ALD for logic devices
Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang
Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and
Youngnam University)

V.ALD machines
Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu