Semiconductors
Springer-Verlag New York Inc.
978-0-387-94251-3 (ISBN)
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Semiconductors, Part II.- Device Modeling.- On the Child-Langmuir law for semiconductors.- A critical review of the fundamental semiconductor equations.- Physics for device simulations and its verification by measurements.- An industrial perspective on semiconductor technology modeling.- Combined device-circuit simulation for advanced semiconductor devices.- Methods of the kinetic theory of gases relevant to the kinetic models for semiconductors.- Shock waves in the hydrodynamic model for semiconductor devices.- Macroscopic and microscopic approach for the simulation of short devices.- Derivation of the high field semiconductor equations.- Energy models for one-carrier transport in semiconductor devices.- Some applications of asymptotic methods in semiconductor device modeling.- Discretization of three dimensional drift-diffusion equations by numerically stable finite elements.- Mathematical modeling of quantum wires in periodic heterojunction structures.- Numerical simulation of MOS transistors.- Scattering theory of high frequency quantum transport.- Accelerating dynamic iteration methods with application to semiconductor device simulation.- Boundary value problems in semiconductors for the stationary Vlasov-Maxwell-Boltzmann equations.- On the treatment of the collision operator for hydrodynamic models.- Adaptive methods for the solution of the Wigner-Poisson system.- The derivation of analytic device models by asymptotic methods.- Symmetric forms of energy — momentum transport models.- Analysis of the Gunn effect.- Some examples of singular perturbation problems in Device Modeling.
Reihe/Serie | Graduate Texts in Mathematics ; 58-59 |
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Zusatzinfo | Illustrations, unspecified |
Verlagsort | New York, NY |
Sprache | englisch |
Themenwelt | Mathematik / Informatik ► Mathematik |
Technik ► Elektrotechnik / Energietechnik | |
ISBN-10 | 0-387-94251-3 / 0387942513 |
ISBN-13 | 978-0-387-94251-3 / 9780387942513 |
Zustand | Neuware |
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