Widegap II–VI Compounds for Opto-electronic Applications
Chapman and Hall (Verlag)
978-0-412-39100-2 (ISBN)
One: Growth and Properties.- 1 Bulk growth of widegap II–VI single crystals.- 2 Liquid phase epitaxy and vapour phase epitaxy of the widegap zinc chalcogenides.- 3 Photo-assisted metal–organic vapour phase epitaxy of zinc chalcogenides.- 4 ZnSe growth by conventional molecular beam epitaxy: a review of recent progress.- 5 Metal–organic molecular beam epitaxy growth and properties of widegap II–VI compounds.- 6 Quantum-sized microstructures of wide bandgap II–VI semiconductors.- Two: Materials Characterization.- 7 Optical properties of the wide bandgap II–VI semiconductors.- 8 Transport properties of widegap II–VI compounds.- 9 Transmission electron microscopy of layered structures of widegap II–VI semiconductors.- 10 Self- and impurity diffusion processes in widegap II–VI materials.- 11 Doping and conductivity in widegap II–VI compounds.- Three: Devices.- 12 II–VI electroluminescent devices.- 13 Preparation of widegap II–VI homojunction devices by stoichiometry control.- 14 Optical non-linearities and bistability in II–VI materials.- 15 Implanted widegap II–VI materials for electro-optic applications and electron-beam-pumped devices.
Erscheint lt. Verlag | 31.1.1992 |
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Reihe/Serie | Electronic Materials Series ; 1 |
Zusatzinfo | 26 Illustrations, black and white; XII, 415 p. 26 illus. |
Verlagsort | London |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
ISBN-10 | 0-412-39100-7 / 0412391007 |
ISBN-13 | 978-0-412-39100-2 / 9780412391002 |
Zustand | Neuware |
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