Fabrication of GaAs Devices
Institution of Engineering and Technology (Verlag)
978-0-86341-353-7 (ISBN)
Dr Albert G. Baca received his BS in chemistry and mathematics at the University of New Mexico and his PhD in chemistry at the University of California, Berkeley. Since joining Sandia National Laboratories in 1990, he has conducted research and published on a wide range of compound semiconductor devices and processes. Prior to joining Sandia National Laboratories he worked at ATandT Bell Laboratories on GaAs FET technology from 1985-1990. Dr Carol I.H. Ashby received her BS in chemistry at the University of Idaho and her PhD in inorganic chemistry at the University of Illinois, Champaign-Urbana. Since joining Sandia National Laboratories, she has conducted research and published on many semiconductor materials topics including photochemical etching, plasma etching and deposition, passivation, and wet oxidation. She received R and D 100 Awards in 1993 and 2004.
Chapter 1: Introduction to GaAs devices
Chapter 2: Semiconductor properties, growth, characterisation and processing techniques
Chapter 3: Cleaning and passivation of GaAs and related alloys
Chapter 4: Wet etching and photolithography of GaAs and related alloys
Chapter 5: Dry etching of GaAs and related alloys
Chapter 6: Ohmic contacts
Chapter 7: Schottky contacts
Chapter 8: Field effect transistors
Chapter 9: Heterojunction bipolar transistors
Chapter 10: Wet oxidation for optoelectronic and MIS GaAs devices
Erscheint lt. Verlag | 10.6.2005 |
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Reihe/Serie | Materials, Circuits and Devices |
Verlagsort | Stevenage |
Sprache | englisch |
Maße | 189 x 246 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 0-86341-353-6 / 0863413536 |
ISBN-13 | 978-0-86341-353-7 / 9780863413537 |
Zustand | Neuware |
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