Low Power and Low Voltage Circuit Design with the FGMOS Transistor
Institution of Engineering and Technology (Verlag)
978-0-86341-617-0 (ISBN)
Motivated by consumer demand for smaller, more portable electronic devices that offer more features and operate for longer on their existing battery packs, cutting edge electronic circuits need to be ever more power efficient. For the circuit designer, this requires an understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS) transistor.
Whilst a conventional MOS transistor has only one input, the FGMOS transistors often have several. This fact, along with some other remarkable properties of this very interesting device, offers the designer many extra degrees of freedom that can significantly improve power efficiency. By using FGMOS transistors in the right way - establishing appropriate relationships between their inputs - it is possible to achieve design trade-offs that are not possible with conventional MOS devices. This is especially true when power consumption and supply voltage are the main design constraints.
This book demonstrates how FGMOS transistors can be used in a low voltage and low power design context. The techniques shown provide innovative solutions, often in situations where the limits of the technology in question have been pushed far below the values recommended by the manufacturer.
Esther Rodriguez-Villegas is a lecturer in the Circuits and Systems group in the Department of Electrical and Electronic Engineering at Imperial College, London. Born in Spain, she graduated from the Department of Physics at the University of Seville, receiving the San Alberto award. She went on to achieve her PhD degree from the same university. After receiving a professional research grant from the Spanish government she joined the Microelectronic National Centre, where she worked for almost six years. Before moving to Imperial College Rodriguez-Villegas was an Associate Professor at the University of Seville for two years.
Chapter 1: Introduction
Chapter 2: The Floating Gate MOS transistor (FGMOS)
Chapter 3: FGMOS - Circuit applications and design techniques
Chapter 4: Low power analog continuous-time filtering based on the FGMOS in the strong inversion ohmic region
Chapter 5: Low power analog continuous-time filtering based on the FGMOS in the strong inversion saturation region
Chapter 6: Low power analog continuous-time Gm-C filtering using the FGMOS in the weak inversion region
Chapter 7: Low power log-domain filtering based on the FGMOS transistor
Chapter 8: Low power digital design based on the FGMOS threshold gate
Chapter 9: Summary and conclusions
Reihe/Serie | Materials, Circuits and Devices |
---|---|
Verlagsort | Stevenage |
Sprache | englisch |
Maße | 156 x 234 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 0-86341-617-9 / 0863416179 |
ISBN-13 | 978-0-86341-617-0 / 9780863416170 |
Zustand | Neuware |
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