Semiconductor Materials Analysis and Fabrication Process Control

Part 1 Spectroscopic ellipsometry: in situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices, G.N. Maracas et al; the influence of nanocrystals on the dielectric function of porous silicon, H. Muender et al. Part 2 Secondary ion mass spectroscopy: some examples of depth resolution in SIMS analysis, G. Pruden; sputter induced resonant ionization spectroscopy for trace analysis in silicon, L. Johann et al. Part 3 Contamination monitoring: contamination control and ultrasensitive chemical analysis, H. Ryssel et al; application of advanced contamination analysis for qualification of wafer handling systems and chucks, F. Kroninger et al. Part 4 Epioptic characterization techniques: in situ optical spectroscopy of surfaces and interfaces with submonolayer resolution, J.F. McGilp; surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD - the example of UV photodeposition of silicon dioxide and silicon nitride, C. Licoppe and C. Debauche. Part 5 Characterization of the mechanical state of Sl material system: on the assessment of local stress distributions in integrated circuits, J. Vannellemont et al; strain analysis of multilayered silicon-based contact structures, E. Zolotoyabko et al. Part 6 Joint session on single chamber processing: in-process control of silicide formation during rapid thermal processing, J.-M. Dilhac et al; in situ ellipsometry for real time feedback control of oxidation furnaces, C. Sennerder et al. Part 7 Photoreflectance of III-V materials: optical characterization of the electrical properties of processed GaAs, O.J. Glembocki et al; temperature dependence of the potoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells, Y. Baltagi et al. Part 8 Photoluminescence of photonic material systems: optical tools for intermixing diagnostic - application to InGaAs/InGaAsP microstructures, H. Peyre et al; temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures, C. Arena et al. Part 9 Characterization of electronic properties: lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC, A. Castaldini et al; in situ quality monitoring during the deposition of a-Si:H films. Part 10 FTIR and PL of silicon material systems: non-destructive identification of end of range damage in ion implanted and annealed silicon, U. Shreter et al; optical characterization of semiconductors containing inhomogeneous layers, G.E. Aizenberg et al. Part 11 Posters: nonlinear recombinations in photoreflectance characterization of silicon wafers, B.C. Forget et al; electrochemical etching and profiling of silicon, T.S. Horanvi and P. Tuetto.