Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications
Seiten
2023
Universitätsverlag Chemnitz
978-3-96100-196-5 (ISBN)
Universitätsverlag Chemnitz
978-3-96100-196-5 (ISBN)
In the dissertation "Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for sub-THz Applications", a through-silicon via (TSV) technology module is developed targeting high frequency packaging applications in the millimeter-wave and sub-THz frequency range.
Based on a high-performance 130 nm SiGe BiCMOS technology, TSVs are embedded in a via-middle integration approach. The TSV process module consists of the TSV integration, a carrier wafer handling and a wafer backside process to realize a redistribution layer. A process flow was developed to realize TSV structures with various geometries to ensure a high TSV design flexibility. The TSV process module can be applied for SiGe BiCMOS as well as for interposer technologies.
High-performance TSV interconnections have been simulated to optimize their electrical properties. TSVs were electrically characterized and 3D transitions with low insertion loss <1 dB up to 300 GHz have been demonstrated thus providing excellent RF performance up to sub-THz frequencies.
Different application areas like RF grounding, interposers with integrated waveguides as well as 300 GHz antennas are demonstrated. The potential of millimeter-wave packaging and 3D integration was evaluated.
In this work, the use of TSVs for the millimeter wave and sub-THz frequency range was demonstrated. This opens up new possibilities for system integration and packaging of ultra-high frequency systems.
Based on a high-performance 130 nm SiGe BiCMOS technology, TSVs are embedded in a via-middle integration approach. The TSV process module consists of the TSV integration, a carrier wafer handling and a wafer backside process to realize a redistribution layer. A process flow was developed to realize TSV structures with various geometries to ensure a high TSV design flexibility. The TSV process module can be applied for SiGe BiCMOS as well as for interposer technologies.
High-performance TSV interconnections have been simulated to optimize their electrical properties. TSVs were electrically characterized and 3D transitions with low insertion loss <1 dB up to 300 GHz have been demonstrated thus providing excellent RF performance up to sub-THz frequencies.
Different application areas like RF grounding, interposers with integrated waveguides as well as 300 GHz antennas are demonstrated. The potential of millimeter-wave packaging and 3D integration was evaluated.
In this work, the use of TSVs for the millimeter wave and sub-THz frequency range was demonstrated. This opens up new possibilities for system integration and packaging of ultra-high frequency systems.
Erscheinungsdatum | 03.12.2023 |
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Zusatzinfo | Illustrationen, Diagramme |
Verlagsort | Chemnitz |
Sprache | englisch |
Maße | 148 x 210 mm |
Gewicht | 320 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | BICMOS • Silicium-Durchkontaktierung • Sub-THz Applications • Through-Silicon Via • Wafer level packaging |
ISBN-10 | 3-96100-196-0 / 3961001960 |
ISBN-13 | 978-3-96100-196-5 / 9783961001965 |
Zustand | Neuware |
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Buch | Hardcover (2023)
Hanser (Verlag)
49,99 €