Silicon Carbide Wafer Manufacturing, Optoelectronic and Electronic Devices and Technologies

Preface
Chapter 1: Silicon Carbide Wafer Manufacturing
Epitaxial Growth of Boron Carbide on 4H-SiC
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
Al Implantation in Sic; Where Will the Ions Come to Rest?
Chapter 2: Electronic Packaging
Analysis of Transmission Performance for Fine Pitch Interconnect
Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method
Fabrication of Nanocomposite PDMS/Graphene as Flexible Substrate at Different Graphene Volume
Chapter 3: Optoelectronic and Electronic Devices
Performance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD Tools
Humidity Sensor Performance Based ZnO/SnO2 Nanorods Structure Using Different ZnO Seed Layer
Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications
Characterization of Breath Sensor at Different Frequencies in Outdoor Condition