Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices

Preface
Chapter 1: Defects in Devices on Silicon Carbide
Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials
Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC
Stacking Faults Originating from Star-Defects in 4H-SiC
P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory
The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
Chapter 2: Synchrotron X-ray Topography in Research of Silicone Carbide-Based Devices
Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
Chapter 3: Research and Designing of Machines and Equipment
A Study on Coldflame Propagation Characteristics Applying Amplified Ignition Source to Overcome Landfill gas’s Flame Retardant Limit
Thermal Effect of Bobbin Tool Friction Stir Welding on the Mechanical Behavior of High Density Polyethylene Sheets: Experimental Study
Hydrodynamic Stability Analysis for MHD Casson Fluid Flow through a Restricted Channel
Optimization of Aircraft Fuel Dump Rate towards the Mitigation of Post-Impact Fire