Functional Materials and Materials Reliability

Preface
Chapter 1: Composite Materials and Structures
Control of the Deformation Mode of Aluminum Foam-Filled Tubes as a Function of Foam Porosity
Crashworthiness Analysis of Vehicle Crash-Box Filled with Aluminium Foam
Improving Fiber-Matrix Compatibility by Surface Modification of Coconut Coir Fiber Using White Rot Fungi
Ramie Fiber Woven Composite: The Effect of Feedrate Variation on the Tensile Strength of the Open Hole in the Drilling
Mathematical Model of Shear Stress Transfer at Fiber-Matrix Interface of Composite Material
Study on the Mechanical Properties and Behavior of Corrugated Cardboard under Tensile and Compression Loads
Chapter 2: Functional Materials
Modification of Polyester Properties through Functionalization with PVA
Cellulosic Textile Materials Functionalization with Formic Acid and Improvement of their Properties
First-Principles Insights into the Acetic Acid Sensing Capability of the C39N Armchair Nanotube
Chapter 3: Reliability of Silicon Carbide Metal Oxide Semiconductor Devices
Bias-Induced Instability of 4H-SiC CMOS
On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
Robustness of SiC MOSFETs under Repetitive High Current Pulses
Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress
Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles
Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures
AC-Stress Degradation in SiC MOSFETs
Power Cycling on Lateral GaN and β-Ga2O3 Transistors
Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements
Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages
Reliability and Standardization for SiC Power Devices
Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes
Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs
Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate