Contemporary Trends in Semiconductor Devices
Springer Verlag, Singapore
978-981-16-9126-3 (ISBN)
Rupam Goswami obtained his M.Tech. in 2014 and Ph.D. in 2018 from National Institute of Technology Silchar, India. Currently, he is Assistant Professor at the Department of Electronics and Communication Engineering, School of Engineering, Tezpur University, India. Before joining Tezpur University, he worked as Assistant Professor at Birla Institute of Technology and Science Pilani, Rajasthan, India. His research interests include simulation and modeling of TFETs, TFTs, FinFETs, and memristors. His research works have appeared in 3 books, 22 international peer-reviewed journals, and 13 international peer-reviewed conferences. He is an editor of a book on carbon nanomaterial electronics. Rajesh Saha has received B.E. with honours in Electronics and Telecommunication Engineering from Assam Engineering College, Assam, in 2012 and M.Tech. from NIT Arunachal Pradesh, Yupia, Arunachal Pradesh, in 2015. He has received Ph.D. from NIT Silchar, Assam, in 2018. He has worked as Junior Research Fellow in IIT Guwahati from September 2012 to April 2013. Currently, he is working as Assistant Professor at the Department of ECE in MNIT Jaipur. Before joining MNIT Jaipur, he has worked as Assistant Professor in School of Electronics Engineering, VIT AP University, Amaravati. His research interest includes modeling and simulation of nanoelectronics devices, biosensors, and MEMS. He has published his research work in 25 peer-reviewed journals and 6 international peer-reviewed conferences.
Introduction.- A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFET.- Effect of Noise and Temperature on the Performance of Ferro-Tunnel FET.- An Introduction of Organic Photovoltaic Application from Material and Fabrication Perspective.- Recent Development and Future Prospects of Rigid and Flexible Dye-Sensitized Solar Cell: A Review.- Theory of Nanostructured Kesterite Solar Cell.- Nano-Material based Sensitized Solar Cells.- Lateral Straggle Parameter and its Impact on Hetero-stacked Source Tunnel FET.- Fabrication of ZnO and ZnO-heterostructures for Gas Sensing Applications.- Significance of Optimal Positioning of the Reference Electrode for an ISFET.
Erscheinungsdatum | 22.02.2023 |
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Reihe/Serie | Lecture Notes in Electrical Engineering |
Zusatzinfo | 146 Illustrations, color; 47 Illustrations, black and white; XI, 301 p. 193 illus., 146 illus. in color. |
Verlagsort | Singapore |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
Schlagworte | Field Effect Transistors • Modeling • Opto-Electro-Mechanical Devices • Sensor • Simulation • Solar cells • VLSI |
ISBN-10 | 981-16-9126-6 / 9811691266 |
ISBN-13 | 978-981-16-9126-3 / 9789811691263 |
Zustand | Neuware |
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