Microwave High Power High Efficiency GaN Amplifiers for Communication
Springer Verlag, Singapore
978-981-19-6265-3 (ISBN)
Subhash Chandra Bera received his B. Sc. degree (with honours) in physics from Presidency College, Calcutta, and B. Tech. and M. Tech. degrees in Radio Physics and Electronics from the Institute of Radio Physics and Electronics, University of Calcutta. He also received a Ph.D. degree in microwave and antenna engineering from Gujarat University, India. Since 1994, he has been with the Space Applications Centre, Indian Space Research Organization (ISRO), Ahmedabad, India, where he has been involved in design and development activities of microwave circuits and systems for various INSAT & GSAT series of communication payload projects as well as GAGAN/IRNSS Navigation Payload projects. He has developed several state-of-the art microwave subsystems that are operational in various Indian national satellites. His research interests include microwave active circuits in general and solid-state power amplifiers, channel amplifiers, linearizers, limiters, attenuator and equalizers in particular for spacecraft use. Currently, he is Group Director of Satcom and Navigation Systems Group, Space Applications Centre (ISRO), Ahmedabad, and Associate Project Director of GSAT-24 and GSAT-31 communication payloads. He has authored a book titled “Microwave Active devices and Circuits for Communication” published from Springer in 2018. He has published about 50 research publications in international journals and presented numerous papers in national and international conferences and symposiums. He has also delivered invited talks in the field of microwave active devices and circuits at various workshops and symposiums. He has also been granted four patents.
Chapter 1. Introduction.- Chapter 2. Semiconductor for Microwave High Power Amplifiers.- Chapter 3. Microwave Transistors.- Chapter 4. Microwave High Power Amplifiers.- Chapter 5. Class-A High Power Amplifiers.- Chapter 6. Class-B High Power Amplifiers.- Chapter 7. Class-F High Power Amplifiers.- Chapter 8. Class-J High Power Amplifiers.- Chapter 9. Thermal Design of GaN High Power Amplifiers.
Erscheinungsdatum | 22.12.2022 |
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Reihe/Serie | Lecture Notes in Electrical Engineering ; 955 |
Zusatzinfo | 126 Illustrations, color; 56 Illustrations, black and white; XVI, 260 p. 182 illus., 126 illus. in color. |
Verlagsort | Singapore |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Nachrichtentechnik | |
Schlagworte | Class of Amplifiers • GaN Amplifiers • High Efficiency Amplifiers • High Electron Mobility Transistors • High Power Amplifiers • Microwave Amplifiers • Thermal Design of GaN High Power Amplifiers |
ISBN-10 | 981-19-6265-0 / 9811962650 |
ISBN-13 | 978-981-19-6265-3 / 9789811962653 |
Zustand | Neuware |
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