AUGMENTED SEMICLASSICAL TRANSPORT MODELS FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

Field effect transistors (FETs) with channel material made of a densearray of perfectly aligned carbon nanotubes (CNTs) have been claimedto replace silicon FETs in various applications, including energy efficienthigh-frequency front-end circuits in communication systems, such ashighly linear and low-noise amplifiers. CNTs are especially suitable forradio frequency (RF) electronics, mainly owing to their high carrier mobility,large saturation velocity and small intrinsic capacitance, which are cruciallyimportant for excellent RF-performance.To support the development of competitive RF-CNTFETs, numerical devicesimulations are required to provide a fundamental understanding of theimpact of various physical effects on the device behavior. Additionally, theoptimization of the device design is guided by these device simulations.They also provide a reference for compact models, which are required forexploring the potential of RF-CNTFETs in circuits and for benchmarkingwith incumbent and other emerging technologies.