Some aspects in lifetime prediction of power semiconductor devices

Power electronics, which fully covers the generation, conversion, transmission and usage of electrical energy, is a key technology for human welfare. With the development of technologies, the requirements on the reliability of power electronic systems are keep increasing. Long term operation under harsh environments is often accompanied by higher switching frequency and higher power density. To allow a reliable and sustainable performance of the power electronic systems, precise lifetime estimation of the power semiconductor devices is of significant importance. This work covers some aspects in the lifetime prediction of power semiconductor devices, especially IGBT and diode, in power module and transfer-molded discrete package. Difference in device temperature determination was illustrated using analytical calculation, simulation and measurement. In addition, temperature calculation in the frequency domain was demonstrated which gives benefits in the application with several hundred devices. Furthermore, different control strategies in the power cycling test were compared. The linear cumulative damage theory was validated by using the power cycling test. For the high power IGBT module used in the MMC HVDC application, power cycling lifetime with 50 Hz heating processes was investigated. For the transfer-molded discrete package, the first lifetime model with comparable scope like the lifetime model of power modules was proposed.