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VLSI and Post-CMOS Electronics

Devices, circuits and interconnects

Rohit Dhiman, Rajeevan Chandel (Herausgeber)

Buch | Hardcover

408 Seiten

2019
Institution of Engineering and Technology (Verlag)
978-1-83953-053-1 (ISBN)

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VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.

VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.

Rohit Dhiman is an Assistant Professor in the Electronics & Communication Engineering Department at NIT Hamirpur, India, and is the author/co-author of over 30 publications in international journals and conference proceedings. His main research interest is in device and circuit modelling for low power VLSI design. Rajeevan Chandel is Professor in the Electronics & Communication Engineering Department and Dean (Research & Consultancy) at the National Institute of Technology (NIT) Hamirpur, India. She has over 150 research papers in peer reviewed international journals and conferences. Her research interests are electronics circuit modelling and low power VLSI design.

Section I: High-performance compound semiconductor devices and applications

Chapter 1: III-V compound semiconductor transistors - from planar to nanowire structures
Chapter 2: UTB III-V-OI-Si MOS transistor: the future transistor for VLSI design
Chapter 3: Assessment of SiGe/Si heterojunction tunnel field-effect transistor for digital VLSI circuit applications
Chapter 4: Simulation framework for GaN devices with special mention to reliability concern

Section II: Process variability in FinFETs: challenges and mitigation

Chapter 5: Impact of oxide thickness variation on the performance of junctionless FinFET
Chapter 6: Design and analysis of variability aware FinFET-based SRAM circuit design

Section III: Through silicon via interconnects for three-dimensional integration

Chapter 7: Modelling interconnects for future VLSI circuit applications
Chapter 8: Nanomagnetic computing for next generation interconnects and logic design
Chapter 9: Prospective current mode approach for on-chip interconnects in integrated circuit designs
Chapter 10: Design of through silicon vias for improved performance in 3D IC applications
Chapter 11: Prospective graphene-based through silicon vias in three-dimensional integrated circuits

Section IV: Emerging technologies for integrated circuits

Chapter 12: Radiation hard circuit design: flip-flop and SRAM
Chapter 13: Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applications
Chapter 14: Methods to design ternary gates and adders
Chapter 15: Single EXCCII based square/triangular wave generator for capacitive sensor interfacing and brief review
Chapter 16: Transient fault secured/tolerant architecture for DSP core

Erscheinungsdatum	27.11.2019
Reihe/Serie	Materials, Circuits and Devices
Verlagsort	Stevenage
Sprache	englisch
Maße	156 x 234 mm
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	1-83953-053-7 / 1839530537
ISBN-13	978-1-83953-053-1 / 9781839530531
Zustand	Neuware