Silicon-germanium Heterojunction Bipolar Transistors
Seiten
2002
Artech House Publishers (Verlag)
978-1-58053-361-4 (ISBN)
Artech House Publishers (Verlag)
978-1-58053-361-4 (ISBN)
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
Preface. Introduction. SiGe Strained-Layer Epitaxy. SiGe HBT BiCMOS Technology. dc Behavior. Dynamic Behavior. Second Order Phenomena. Noise. Linearity. Temperature Effects. Other Device Design Issues. Radiation Tolerance. Device Simulation. Future Directions. Appendices.
Erscheint lt. Verlag | 31.1.2003 |
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Zusatzinfo | black & white illustrations |
Verlagsort | Norwood |
Sprache | englisch |
Maße | 156 x 234 mm |
Gewicht | 995 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Nachrichtentechnik | |
ISBN-10 | 1-58053-361-2 / 1580533612 |
ISBN-13 | 978-1-58053-361-4 / 9781580533614 |
Zustand | Neuware |
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