Metal Oxides for Non-volatile Memory

Panagiotis Dimitrakis is a Senior Researcher, Cleanroom Facility Manager in the Institute of Nanoscience and Nanotechnology, Greece. Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany. Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 – 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology.

1. Introduction to non-volatile memory 2. Resistive switching in metal-oxide memristive materials and devices 3. Charge trapping NVMs with metal oxides in the memory stack 4. Technology and neuromorphic functionality of magnetron-sputtered memristive devices 5. Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship 6. MOx materials by ALD method 7. Nano-composite MOx materials for NVMs 8. MOx in ferroelectric memories 9. “Metal oxides in magnetic memories”: Current status and future perspectives 10. Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications 11. The effect of external stimuli on the performance of memristive oxides 12. MOX for NVM on graphene and 2D materials 13. Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission 14. Neuromorphic applications using MOx-based memristors