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VLSI and Post-CMOS Electronics
Institution of Engineering and Technology (Verlag)
978-1-83953-051-7 (ISBN)
VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.
Rohit Dhiman is an Assistant Professor in the Electronics & Communication Engineering Department at NIT Hamirpur, India, and is the author/co-author of over 30 publications in international journals and conference proceedings. His main research interest is in device and circuit modelling for low power VLSI design. Rajeevan Chandel is Professor in the Electronics & Communication Engineering Department and Dean (Research & Consultancy) at the National Institute of Technology (NIT) Hamirpur, India. She has over 150 research papers in peer reviewed international journals and conferences. Her research interests are electronics circuit modelling and low power VLSI design.
Section I: Low voltage and low power VLSI design
Chapter 1: Low-voltage analog signal processing
Chapter 2: Negative bias temperature instability (NBTI) aware low leakage circuit design
Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold design technique
Chapter 4: Design and analysis of memristor-based DRAM cell for low-power application
Chapter 5: Design of a novel tunnel FET for low-power applications
Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL
Section II: Modelling and simulation for post-CMOS device and circuit design
Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and challenges
Chapter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics
Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices
Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology
Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms
Chapter 12: High performing metal-oxide semiconductor thin-film transistors
Chapter 13: CNTFETs: modelling and circuit design
Erscheinungsdatum | 27.11.2019 |
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Reihe/Serie | Materials, Circuits and Devices |
Verlagsort | Stevenage |
Sprache | englisch |
Maße | 156 x 234 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 1-83953-051-0 / 1839530510 |
ISBN-13 | 978-1-83953-051-7 / 9781839530517 |
Zustand | Neuware |
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