Deep Ultraviolet LEDs (eBook)

Dr. Zi-Hui Zhang received his B.S. and Ph.D. from Shandong University and Nanyang Technological University, respectively. Currently, he is a Professor at the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, the Key Laboratory of Electronic Materials and Devices of Tianjin, and School of Electronics and Information Engineering. He is also a “100-Talent-Plan” Distinguished Professor of Hebei Province. His research interests include III-nitride based semiconductor materials and devices. To date, he has authored/co-authored more than 70 high-level SCI papers in Applied Physics Letters, Optics Express, Optics Letters, ACS Photonics etc. He has also been invited to contribute book chapters for the Handbook for Solid-State Lighting and LEDs (CRC Press, Taylor & Francis Group), Handbook of GaN Semiconductor Materials and Devices (CRC Press, Taylor & Francis Group), and Light-emitting Diodes - Materials, Processes, Devices and Applications (Springer). He also holds more than 20 patents (applied). Ms. Chunshuang Chu received her B.S. from the Department of Physics at Hebei North University in 2016. She is currently pursuing her Ph.D. at the School of Electronics and Information Engineering, Hebei University of Technology. Her research interests include device fabrication, characterization, simulation and design for III-nitride based semiconductor devices. Mr. Kangkai Tian received his B.E. degree from the School of Electronics and Information of Nantong University in 2016. He is currently pursuing his Ph.D. degree at the School of Electronics and Information, Hebei University of Technology. His major focus is on the design and fabrication of III-nitride based light-emitting diodes and electronic devices. Dr. Yonghui Zhang received his Bachelor’s and Master’s degrees from Hebei University of Technology in 2007 and Beijing University of Technology, respectively. After earning his Ph.D. from the Institution of Semiconductors, Chinese Academy of Sciences in 2015, he began teaching and research work at Hebei University of Technology. His main research interest is in GaN-based light emitting diodes (LEDs) with micro- or nano-structure. In this regard he is employing a range of nanotechnologies, including nano-patterned sapphire substrate, photonic crystal and core-shell technology, to improve the quantum efficiency of LED. He has published more than 20 papers related to these fields in international mainstream journals, and holds six patents.

Acknowledgements 6
Contents 7
Abstract 8
1 Introduction 9
References 10
2 Increase the IQE by Improving the Crystalline Quality for DUV LEDs 12
References 13
3 Improve the Current Spreading for DUV LEDs 15
References 16
4 Improve the Hole Injection to Enhance the IQE for DUV LEDs 17
4.1 Make Holes “Hot” for DUV LEDs 18
4.2 Superlattice p-EBL to Improve the Hole Injection Efficiency 24
4.3 Manipulate the Hole Injection Mechanism by Using Novel p-EBLs Structure for DUV LEDs 28
4.4 Increase the Hole Concentration in the MQWs for DUV LEDs 34
References 35
5 Enhance the Electron Injection Efficiency for DUV LEDs 38
References 46
6 Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs 48
References 62
7 Thermal Management for DUV LEDs 63
References 64
8 The Light Extraction Efficiency for DUV LEDs 65
References 68
9 Conclusions and Outlook 70
Appendix 72