Current Sensing Techniques and Biasing Methods for Smart Power Drivers

Sri Navaneethakrishnan Easwaran was born in Erode, India on October 19, 1977. After finishing his Higher Secondary school, he received his Bachelor of Engineering, B.E. Degree (cum laude) in Electronics and Communication Engineering from Shanmugha College of Engineering (affliated to Bharathidasan University, Tiruchirapalli, India), Thanjavur, India in 1998. He worked at SPIC Electronics, Chennai and STMicroelectronics, Noida, India between 1998 and 2000. From 2000 he worked for Philips Semiconductors at Bengaluru India, Zurich Switzerland and Nijmegen, The Netherlands where he designed analog circuits for Mobile Baseband and Power Management Units. While working at Philips Semiconductors, he received the International M.Sc. degree in Electrical Engineering from the University of Twente, Enschede, The Netherlands on the design of NMOS LDOs. From 2006 he started his work at Texas Instruments GmbH Freising, Germany and he joined the Technische Elektronik group at Friedrich-Alexander-Universität Erlangen-Nürnberg in January 2010 as an external Ph.D student. His research focused on the fault tolerant design of smart power drivers and diagnostic circuits. Since September 2010 he is with Texas Instruments Inc, Dallas, Texas USA. He was elected as the Senior Member of IEEE in 2011, Member Group Technical Staff at Texas Instruments in 2014. He has more than 15 patents (US and German) in the field of Analog Mixed Signal IC Design and has IEEE and conference publications.

Introduction.- State of the Art: Current Sensing, Biasing Schemes and Voltage Reference.- Current Sensing Principles with Biasing Scheme.- High Side Current Regulation and Energy Limitation.- Low Side Current Regulation and Energy Limitation.- Biasing Schemes and Diagnostic Circuit.- Conclusions and Future Work.- Appendices.