Design, Simulation and Construction of Field Effect Transistors
Seiten
2018
IntechOpen (Verlag)
978-1-78923-416-9 (ISBN)
IntechOpen (Verlag)
978-1-78923-416-9 (ISBN)
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In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Erscheinungsdatum | 05.03.2022 |
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Verlagsort | London |
Sprache | englisch |
Maße | 180 x 260 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 1-78923-416-6 / 1789234166 |
ISBN-13 | 978-1-78923-416-9 / 9781789234169 |
Zustand | Neuware |
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