Process Technology for Silicon Carbide Devices
Institution of Engineering and Technology (Verlag)
978-0-85296-998-4 (ISBN)
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Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.
Carl-Mikael Zetterling received the M.Sc.E.E. and Ph.D. degrees from KTH, the Royal Institute of Technology in Stockholm, in 1991 and 1997, respectively. He is currently associate professor in the Department of Microelectronics and Information Technology. He is director of studies at the department, and teaches VLSI process technology and modelling of VLSI devices. His field of research is process technology and device design of high-frequency and high-power devices in wide bandgap materials, especially SiC. He has been working experimentally on SiC since 1992, and has contributed to over 60 publications. He was a visiting scholar for one year at the Center for Integrated Systems (CIS) at Stanford University, USA, and has also been to Japan as visiting professor (Kyoto University in 1998 and Kyoto Institute of Technology in 2001).
Chapter 1: Advantages of SiC
Chapter 2: Bulk and epitaxial growth of SiC
Chapter 3: Ion implantation and diffusion in SiC
Chapter 4: Wet and dry etching of SiC3 Ion implantation and diffusion in SiC
Chapter 5: Thermally grown and deposited dielectrics on SiC
Chapter 6: Schottky and ohmic contacts to SiC
Chapter 7: Devices in SiC
| Erscheint lt. Verlag | 30.10.2002 |
|---|---|
| Reihe/Serie | Materials, Circuits and Devices |
| Verlagsort | Stevenage |
| Sprache | englisch |
| Maße | 189 x 246 mm |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 0-85296-998-8 / 0852969988 |
| ISBN-13 | 978-0-85296-998-4 / 9780852969984 |
| Zustand | Neuware |
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