Functionality-Enhanced Devices

An alternative to Moore's Law

Pierre-Emmanuel Gaillardon (Herausgeber)

Buch | Hardcover

344 Seiten

2019
Institution of Engineering and Technology (Verlag)
978-1-78561-558-0 (ISBN)

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This book discusses one possible solution to the key issue in electronics engineering - the approaching limits of CMOS scaling - by taking advantage of the tendency of Schottky contacts to form at channel interfaces in nanoscale devices. Rather than suppressing this phenomenon, a functionality-enhanced device exploits it to increase switching functionality. These devices are Multiple-Independent-Gate-Field-Effect-Transistors, and other related nanoscale devices, whose polarity is electrostatically controllable. The functionality enhancement of these devices increases computational performance (function) per unit area and leads to circuits with better density, performance and energy efficiency.

The book provides thorough and systematic coverage of enhanced-functionality devices and their use in proof-of-concept circuits and architectures. The theory and materials science behind these devices are addressed in detail, and various experimental fabrication techniques are explored. In addition, the potential applications of functionality-enhanced devices are outlined with a specific emphasis on circuit design, design automation and benchmarking.

Pierre-Emmanuel Gaillardon is an Assistant Professor in the Electrical and Computer Engineering Department and an adjunct assistant professor in the School of Computing at The University of Utah, Salt Lake City, USA where he leads the Laboratory for NanoIntegrated Systems (LNIS). Professor Gaillardon is recipient of the BSF 2017 Prof. Pazy Memorial Research Award, the 2018 NSF CAREER award in functionality-enhanced transistors and the 2018 IEEE CEDA Pederson Award.

Chapter 1: Introduction to functionality-enhanced devices
Part I: Materials and device research related to functionality-enhanced devices

Chapter 2: Germanium-based polarity-controllable transistors
Chapter 3: Two-dimensional materials for functionality-enhanced devices
Chapter 4: Wse2 polarity-controllable devices
Chapter 5: Carrier type control of MX2 type 2D materials for functionality-enhanced transistors
Chapter 6: Three-independent gate FET's super steep subthreshold slope
Chapter 7: Super sensitive terahertz detectors

Part II: Applications and design techniques of functionality-enhanced devices

Chapter 8: CNT and SiNW modeling for dual-gate ambipolar logic circuit design
Chapter 9: Physical design of polarity controllable transistors
Chapter 10: BCB benchmarking for three-independent-gate field effect transistors
Chapter 11: Exploratory logic synthesis for multiple independent gate FETs
Chapter 12: Ultrafine grain FPGAs with polarity controllable transistors
Chapter 13: Tunnel FET-based security primitive design

Erscheinungsdatum	08.01.2019
Reihe/Serie	Materials, Circuits and Devices
Verlagsort	Stevenage
Sprache	englisch
Maße	156 x 234 mm
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	1-78561-558-0 / 1785615580
ISBN-13	978-1-78561-558-0 / 9781785615580
Zustand	Neuware