Charge-Trapping Non-Volatile Memories
Springer International Publishing (Verlag)
978-3-319-83999-8 (ISBN)
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
- Details new architectures and current modeling concepts for non-volatile memory devices;
- Focuses on conduction through multi-layer gate dielectrics stacks.
Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.
Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
| Erscheinungsdatum | 05.03.2022 |
|---|---|
| Zusatzinfo | V, 211 p. 170 illus., 117 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 343 g |
| Themenwelt | Technik ► Maschinenbau |
| Schlagworte | 3D Non-volatile Memories • Charge-trapping Layer • Charge-trapping Memories • Flash memories • MAHOS • MANOS • MONOS • Nitride Memories • non-volatile memories • Semiconductor Memories • SONOS • TANOS |
| ISBN-10 | 3-319-83999-3 / 3319839993 |
| ISBN-13 | 978-3-319-83999-8 / 9783319839998 |
| Zustand | Neuware |
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