Tunneling Field Effect Transistor Technology

Buch | Softcover

IX, 213 Seiten

2018 | 1. Softcover reprint of the original 1st ed. 2016
Springer International Publishing (Verlag)
978-3-319-81087-4 (ISBN)

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This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

SteepSlope Devices and TFETs.- Tunnel-FETFabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for DigitalApplications.- Atomistic Simulations of Tunneling FETs.- Quantum TransportSimulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: StructureOptimization with Numerical Simulation.

Erscheinungsdatum	20.07.2018
Zusatzinfo	IX, 213 p. 147 illus., 122 illus. in color.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	349 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Carbon Nanotube TFETs • Low Power SRAM Design • MOSFETs • Nanoscaled Field Effect Transistors • Nanowire Field Effect Transistors • TFETs • Tunneling Field Effect Transistors
ISBN-10	3-319-81087-1 / 3319810871
ISBN-13	978-3-319-81087-4 / 9783319810874
Zustand	Neuware