Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling (eBook)

Title Page 2
Copyright 3
Dedication 4
Danksagung 6
Abstract 8
Table of Contents 12
List of Symbols 16
1 Introduction 20
2 Modeling III-V based HBTs 24
2.1 Introduction 24
2.2 Differences between SiGe and III-V HBTs 25
2.2.1 III-V material properties 25
2.2.2 Vertical composition 27
2.2.3 Top view and cross section 31
2.3 Compact modeling 34
2.3.1 Principles of compact modeling 34
2.3.2 The HICUM compact model 36
2.3.3 Existing III-V compact models 38
2.4 Numerical simulations of III-V materials 40
2.4.1 Material properties 41
2.4.2 n+ ? n ? n+ structure 42
2.4.3 HBT structure 45
2.4.4 Conclusions 48
3 Model extensions 50
3.1 Introduction 50
3.2 Temperature dependence of the base current components 50
3.3 Collector-emitter parasitic capacitance 52
3.4 Multi-region junction capacitance 54
3.4.1 Standard compact model capacitance description 55
3.4.2 Derivation for the multi-region model 57
3.4.3 Voltage limiting 61
3.4.4 Model verification 64
3.4.5 Temperature dependence 66
3.5 Collector transit time 67
3.5.1 Low-current transit time 67
3.5.2 Medium current transit time 81
4 Compact model parameter determination 94
4.1 Introduction 94
4.2 Parameter determination 95
4.2.1 Parameter determination methodology 95
4.2.2 On-wafer measurements 97
4.2.3 Pulsed measurements 100
4.3 Evaluation of extraction methods for series resistances 105
4.3.1 Evaluating extraction methods 105
4.3.2 Investigated process technologies 108
4.3.3 Methods for the emitter resistance 109
4.3.4 Methods for the collector resistance 125
4.3.5 Methods for the base resistance 134
4.4 Single device parameter extraction 146
4.4.1 Junction capacitances 146
4.4.2 Diode parameters 148
4.4.3 Series resistances 149
4.4.4 Avalanche current parameters 150
4.4.5 Temperature coefficients and thermal resistance 151
4.4.6 Transit time parameters 155
4.4.7 Transfer current parameters 160
4.4.8 Additional extraction steps 162
4.4.9 Summary 163
4.5 Geometry-scalable parameter extraction 164
4.5.1 Technology description 166
4.5.2 Test structures 167
4.5.3 Geometry separation 172
4.5.4 Scaling of other parameters 176
4.5.5 Discussion 177
5 Model application 182
5.1 250 GHz InP technology 182
5.2 500 GHz InP technology 187
5.3 GaAs technology 193
6 Summary and outlook 196
Bibliography 200
Appendix A: Material parameters for numerical device simulations 216
A.1 Band gap 216
A.2 Band gap narrowing 217
A.3 Effective mass 219
A.4 Dielectric constant 219
A.5 Impact ionization 219
A.6 Recombination 220
A.7 Low-field mobility 222
A.8 Field-dependent mobility 223
A.9 Energy relaxation time 223
Appendix B: Impact of relative permittivity on the collector junction capacitance 226
Appendix C: Supplementary figures for model verification 228
C.1 250 GHz InP process 229
C.2 500 GHz InP process 235
C.3 GaAs process 239