Tantalum and Niobium-Based Capacitors
Springer International Publishing (Verlag)
978-3-319-67869-6 (ISBN)
Yuri P. Freeman is director of advanced research in the Tantalum (Ta) business unit and a member of the Advance Technology Group (ATG) at KEMET Electronics. The ATG is responsible for KEMET's technical strategy, which includes cooperation with Universities on fundamental issues in passive electronic components. Yuri P. Freeman received his Ph.D. in physics of the solid state from Kharkov Technical University (KhTU) in Ukraine. Prior to KEMET, he worked as principal scientist at Elitan, the largest producer in the Soviet Union of Ta and Niobium (Nb) capacitors, and at Vishay Sprague in the USA. Simultaneously with working in industry, he taught "Physics of Electronic Components" in the KhTU and now in the Clemson University in the USA. Yuri P. Freeman has published more than 30 papers and received 26 patents in the field of physics and technology of Ta and Nb-based capacitors.
Introduction.- Chap1: Major Degradation Mechanisms.- Chap2: Basic Technology.- Chap3: Applications.- Conclusion.
| Erscheinungsdatum | 23.11.2017 |
|---|---|
| Zusatzinfo | XIX, 120 p. 109 illus., 57 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 380 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | amorphous Ta2O5 thin films • Capacitor Technology • Circuits and Systems • Electronic Circuits and Devices • electronic devices & materials • Electronic devices & materials • Electronics and Microelectronics, Instrumentation • electronics: Circuits & components • Electronics: circuits & components • Electronics engineering • Engineering • Engineering: general • Materials Research for Manufacturing • metal-insulator-semiconductor • MOSFET transistors |
| ISBN-10 | 3-319-67869-8 / 3319678698 |
| ISBN-13 | 978-3-319-67869-6 / 9783319678696 |
| Zustand | Neuware |
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