Micro- and Nanoelectronics

Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.

SiGe BiCMOS Technology and Devices. Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices. SiC MOS Devices: N Passivation of Near-Interface Defects. Fully Depleted Devices: FDSOI and FinFET. Fully Depleted SOI Technology Overview. FinFETs: Designing for New Logic Technology. Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures. High-Mobility Channels. 2-D InAs XOI FETs: Fabrication and Device Physics. Beyond-CMOS Devices. Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing. Four-State Hybrid Spintronics–Straintronics for Ultralow Power Computing. Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics. Physics-Based Compact Graphene Device Modeling. Carbon Nanotube Vertical Interconnects: Prospects and Challenges. Graphene Nanosheet as Ultrathin Barrier.