Fundamentals of Nanoscaled Field Effect Transistors
Seiten
2016
|
Softcover reprint of the original 1st ed. 2013
Springer-Verlag New York Inc.
978-1-4939-4482-8 (ISBN)
Springer-Verlag New York Inc.
978-1-4939-4482-8 (ISBN)
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.
Erscheinungsdatum | 22.11.2016 |
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Zusatzinfo | 102 Illustrations, color; 19 Illustrations, black and white; XIV, 201 p. 121 illus., 102 illus. in color. |
Verlagsort | New York |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | Ballistic Effect Devices • Biaxial Strained Si Technology • compact MOSFET models • Electron Devices • MOSFETs at Nanoscale • Nanoscale MOSFET • Nanoscale MOS Transistors • Transistor Quantum Effects |
ISBN-10 | 1-4939-4482-7 / 1493944827 |
ISBN-13 | 978-1-4939-4482-8 / 9781493944828 |
Zustand | Neuware |
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