MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Seiten
2016
|
1. Softcover reprint of the original 1st ed. 2014
Springer International Publishing (Verlag)
978-3-319-34535-2 (ISBN)
Springer International Publishing (Verlag)
978-3-319-34535-2 (ISBN)
This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.
Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.
Erscheinungsdatum | 03.08.2016 |
---|---|
Reihe/Serie | Analog Circuits and Signal Processing |
Zusatzinfo | XV, 199 p. 55 illus., 45 illus. in color. |
Verlagsort | Cham |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Nachrichtentechnik | |
Schlagworte | Analog/RF IC Design • Circuits and Systems • CMOS Radio-Frequency Integrated Circuits • Communications Engineering, Networks • Communications engineering / telecommunications • CSDG MOSFET • Double-Gate MOSFET • Double-Pole Four-Throw RF Switch • DP4T RF Switch • Electronic devices and materials • Electronics: circuits and components • Engineering • HFO2 Based Double-Gate MOSFET • semiconductors |
ISBN-10 | 3-319-34535-4 / 3319345354 |
ISBN-13 | 978-3-319-34535-2 / 9783319345352 |
Zustand | Neuware |
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