Dielectric Breakdown in Gigascale Electronics - Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky

Dielectric Breakdown in Gigascale Electronics

Time Dependent Failure Mechanisms
Buch | Softcover
VIII, 105 Seiten
2016 | 1st ed. 2016
Springer International Publishing (Verlag)
978-3-319-43218-2 (ISBN)
53,49 inkl. MwSt
This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics.  Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

Introduction.- General Theories.- Measurement Tools and Test Structures.- Experimental Techniques.- Breakdown Experiments.- Kinetics of Charge Carrier Confinement in Thin Dielectrics.- Theory of Dielectric Breakdown in Nanoporous Thin Films.- Dielectric Breakdown in Copper Interconnects.- Reconsidering Conventional Models.

Erscheinungsdatum
Reihe/Serie SpringerBriefs in Materials
Zusatzinfo VIII, 105 p. 74 illus., 33 illus. in color.
Verlagsort Cham
Sprache englisch
Maße 155 x 235 mm
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte Chemistry and Materials Science • Chip Interconnects • Dielectric Breakdown • Electronic Circuits and Devices • Interconnect Reliability Science • Low-k Interconnect • Metal Catalyzed Dielectric Failure • Nanoporous Dielectrics • nanotechnology • Nanotechnology and Microengineering • optical and electronic materials • Reliability of Gigascale Electronics • Reliability of Modern Porous Low-k Films • TDDB for Gigascale Electronic Devices • TDDB in Modern Interconnects • Time-dependent-dielectric-breakdown (TDDB)
ISBN-10 3-319-43218-4 / 3319432184
ISBN-13 978-3-319-43218-2 / 9783319432182
Zustand Neuware
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