Variation-Aware Advanced CMOS Devices and SRAM
Springer (Verlag)
978-94-017-7595-3 (ISBN)
The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
Prof. Changhwan Shin is an Assistant Professor in School of Electrical and Computer Engineering in University of Seoul. Prof. Shin is a graduate of Korea University (BE) and University of California Berkeley (Ph.D). Also, he is Technical Committee Members for IEEE SOI Conference and European Solid-State Device Research Conference (ESSDERC). His research activities cover Electronic Devices and Integrated Circuits; Advanced electronic device architecture for various types of System-on-Chip(SoC) memory and logic devices/ All-in-one Variability Analysis for Nanometer-scale Electronic Devices/ Post-Silicon Technology (CNT, Graphene) & Bio-applications/ Device-and-Circuit Co-optimization: "Low-Level" Digital/Analog Circuit Design Methodology Development/ Programmable Chip Development using Advanced Electronic Devices.
1 Introduction and Overview.- 2 Understanding of Process-Induced Random Variation.- 3 Various Variation-Robust CMOS Device Designs.- 4 Applications to Static Random Access Memory (SRAM).- 5 Conclusion.
Erscheinungsdatum | 08.10.2016 |
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Reihe/Serie | Springer Series in Advanced Microelectronics ; 56 |
Zusatzinfo | 101 Illustrations, color; 17 Illustrations, black and white; VII, 140 p. 118 illus., 101 illus. in color. |
Verlagsort | Dordrecht |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Schlagworte | CMOS Device Designs • Integrated Circuits • Line Edge Roughness • MOSFET • Process-Induced Random Variation • Random Dopant Fluctuation • Static Random Access Memory • Variation-Robust CMOS • Work-function Variation |
ISBN-10 | 94-017-7595-8 / 9401775958 |
ISBN-13 | 978-94-017-7595-3 / 9789401775953 |
Zustand | Neuware |
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