Frontiers of Graphene and Carbon Nanotubes -

Frontiers of Graphene and Carbon Nanotubes (eBook)

Devices and Applications

Kazuhiko Matsumoto (Herausgeber)

eBook Download: PDF
2015 | 2015
XVIII, 289 Seiten
Springer Japan (Verlag)
978-4-431-55372-4 (ISBN)
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96,29 inkl. MwSt
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This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials.

This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes.
It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development.


This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials.This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes.It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development.

Preface 6
Contents 10
About the Authors 12
Part I Graphene 20
1 CVD Growth of High-Quality Single-Layer Graphene 21
1.1 Introduction 21
1.2 Preparation Methods of Graphene 22
1.3 CVD Growth Over Metal Catalyst 23
1.4 CVD Growth Over Heteroepitaxial Co Films 25
1.5 CVD Growth Over Heteroepitaxial Cu Films 28
1.6 Increasing Graphene Domain Size on Heteroepitaxial Cu Films 30
1.7 Recent Progress and Future Prospect 34
1.8 Summary 36
References 36
2 Graphene Laser Irradiation CVD Growth 39
2.1 Introduction 39
2.2 Experimental Procedure 40
2.3 Results and Discussion 41
2.4 Conclusion 44
References 45
3 Graphene Direct Growth on Si/SiO2 Substrates 46
3.1 Introduction 46
3.2 Experimental Procedure 47
3.3 Results and Discussion 48
3.4 Conclusion 51
References 52
4 Direct Growth of Graphene and Graphene Nanoribbon on an Insulating Substrate by Rapid-Heating Plasma CVD 53
4.1 Direct Growth of 2D Graphene Sheet 54
4.2 Direct Growth of 1D Graphene: Graphene Nanoribbon 61
4.3 Conclusions 67
References 67
5 Graphene/Metal Contact 69
5.1 Fundamental Issues Concerning the Carrier Injection 69
5.2 Graphene/Metal Interaction 74
5.3 Energy-Band Diagrams 75
5.4 The p–n Junction Formation 78
5.5 Electron Transport and Contact Resistivity 80
5.5.1 Current Flow Path at the Metal/Graphene Contact and Contact Resistivity 80
5.5.2 Correlation Between Contact Resistivity and DOS 85
5.6 The Requirement for Contact Resistivity 88
5.7 Conclusions and Future Outlook 90
References 91
6 Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs 95
6.1 Introduction 96
6.2 Low-Temperature Synthesis of Graphene with Chemical Vapor Deposition 96
6.3 Fabrication of Top-Gated Field-Effect Transistors Without Using Transfer Processes 99
6.4 Direct Synthesis of Graphene on the Substrateand Its Fabrication Process 103
6.5 Summary 104
References 104
7 Graphene Biosensor 106
7.1 Introduction 106
7.2 Principle of Graphene Biosensor 107
7.3 Device Fabrication 108
7.4 Result and Discussions 109
7.4.1 Electrical Double Layer 109
7.4.2 Solution pH Sensing 111
7.4.3 Protein Adsorption Detecting 112
7.4.4 Specific Protein Sensing 113
7.5 Conclusion 117
References 117
8 Graphene Terahertz Devices 119
8.1 Introduction 119
8.2 Optoelectronic Properties of Graphene for THz Active Device Applications 120
8.2.1 Optical Conductivity in Graphene 120
8.2.2 Nonequilibrium Carrier Dynamics and Negative Dynamic Conductivity in Optically Pumped Graphene 122
8.3 Graphene Active Plasmonics for THz Device Applications 123
8.3.1 Dispersion and Modes of Graphene Plasmons 124
8.3.2 Giant THz Gain by Stimulated Plasmon Emission in Inverted Graphene 125
8.4 Toward the Creation of Current-Injection-Pumped Graphene THz Lasers 128
8.4.1 Lateral p-i-n Junction in Dual-Gate Graphene-Channel FETs 128
8.4.2 Plasmonic THz Lasing and Superradiance in Dual-Grating Gate G-FETs 130
8.5 Some Other Functional Devices 131
8.5.1 Graphene THz Modulators 131
8.5.2 Graphene THz Detectors and Photomixers 132
8.6 Conclusion 132
References 133
Part II Carbon Nanotube (CNT) 137
9 Carbon Nanotube Synthesis and the Role of Catalyst 138
9.1 Introduction 138
9.2 CVD Growth 139
9.3 Roll of Catalyst 139
References 141
10 Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates 143
10.1 Introduction 144
10.2 Experimental Procedure 144
10.3 Results and Discussion 145
10.3.1 Direction Control Growth 145
10.3.2 Fabrication of FETs 152
10.4 Conclusion 153
References 153
11 Plasma Doping Processes for CNT Devices 154
11.1 Internal and Surface Doping of CNTs Using Various Kinds of Plasmas 155
11.2 Device-Applicable Properties of Doped CNTs 160
11.3 Electro-optic Fusion Devices Using Doped CNTs 166
11.4 Toward Emerging CNT Nano-biomedical Electronic System 171
11.5 Conclusions 173
References 173
12 Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors 175
12.1 Introduction 175
12.2 Experimental Procedure 176
12.2.1 Device Fabrication 176
12.2.2 Back-Gate Operation 177
12.2.3 Solution-Gate Operation 178
12.2.4 Correlation Coefficient 178
12.3 Results and Discussion 180
12.3.1 Back-Gate Operation and Summing Network Effect 180
12.3.2 Solution-Gate Operation and Faint pH Detection 182
12.4 Conclusion 185
References 186
13 Electrochemical Biological Sensors Based on Directly Synthesized Carbon Nanotube Electrodes 188
13.1 Introduction 188
13.2 Biosensors Based on CNT Electrodes 189
13.3 Microfluidic Chips with Multibiosensors Based on CNT Electrodes 191
13.4 Conclusions 193
References 194
14 Nanomechanical Application of CNT 196
14.1 Suspended Resonators 197
14.2 Cantilever Resonator 199
14.3 Summary 206
References 206
15 Carbon Nanotube Quantum Nanomemory 209
15.1 Single-Charge Memory Operated at Room Temperature 209
15.1.1 Introduction 209
15.1.2 Sample Preparations 210
15.1.3 Experimental Results and Discussions 212
15.1.4 Summary 218
References 218
16 Control of Particle Nature and Wave Nature of Electron in CNT 220
16.1 Introductions 220
16.2 The Transistor That Is Compatible with the Resonant Tunneling Transistor and the Single-Hole Transistor 222
16.2.1 Sample Preparations 222
16.2.2 Experimental Results and Discussions 223
16.2.3 Summary 230
16.3 The Double-Gated Operation of the Multifunctional Quantum Transistor 232
16.3.1 Sample Preparations 232
16.3.2 Experimental and Discussions 233
16.3.3 Summary 238
16.4 The Kondo Effect in the Transition Region Between the Resonant Tunneling Transistor Operation and the Single-Electron Transistor Operation 239
16.4.1 Sample Preparations 239
16.4.2 Experimental and Discussions 239
16.4.3 Summary 244
16.5 Summary of the Chapter 245
References 245
17 Quantum-Dot Devices with Carbon Nanotubes 248
17.1 Introduction 248
17.2 Quantum Dot and Artificial Atom 250
17.2.1 Coulomb Blockade and Single-Electron Transistor 250
17.2.2 Quantum Dot and Artificial Atom (Metallic Tubes) 252
17.2.3 Quantum Dots with Semiconducting Tubes 256
17.3 Fabrication Process 258
17.3.1 Tunnel Barrier Formation 258
17.3.2 Aligned Nanotubes 261
17.4 Quantum-Dot Devices 262
17.4.1 Double-Quantum Dots 262
17.4.2 Single-Electron Inverter and XOR 266
17.4.3 Quantum THz Detection 269
17.5 Conclusions 272
References 272
18 High-Mobility Thin-Film Transistors for Flexible Electronics Applications 276
18.1 Introduction 276
18.2 CNT Thin-Film Technology for High-Mobility TFTs 277
18.3 CNT Integrated Circuits on Plastic Substrates 281
18.4 All-Carbon Integrated Circuits 284
18.5 Printing Fabrication 286
18.6 Summary 289
References 289
Index 291

Erscheint lt. Verlag 5.3.2015
Zusatzinfo XVIII, 289 p. 214 illus., 183 illus. in color.
Verlagsort Tokyo
Sprache englisch
Themenwelt Technik Bauwesen
Technik Maschinenbau
Schlagworte biosensor devices • Carbon Nanotubes • Growth of Graphen • Integrated circuit • Nanocarbon Growth and Process Technology • Quantum devices • Tera Hertz Device
ISBN-10 4-431-55372-X / 443155372X
ISBN-13 978-4-431-55372-4 / 9784431553724
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