Materials and Process Characterization (eBook)
614 Seiten
Elsevier Science (Verlag)
978-1-4832-1773-4 (ISBN)
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
Front Cover 1
Materials and Process Characterization 4
Copyright Page 5
Table of Contents 6
List of Contributors 10
Preface 12
Chapter 1. Characterization of Silicon Materials for VLSI 14
I. INTRODUCTION 15
II. CHARACTERIZATION TECHNIQUES 22
III. POLYCRYSTALLINE SILICON 47
IV. SINGLE-CRYSTAL SILICON 51
V. SLICE PREPARATION 55
VI. SUMMARY 61
APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON 61
REFERENCES 84
Chapter 2. Characterization of Silicon Expitaxial Films 86
I. INTRODUCTION 87
II. EPITAXIAL-GROWTH PROCESS 89
III. ELECTRICAL CHARACTERIZATION 102
IV. PHYSICAL AND OPTICAL CHARACTERIZATION 120
V. EPITAXIAL-DEFECT CHARACTERIZATION 136
VI. EPITAXIAL-DEFECT MEASUREMENTS 144
VII. SUMMARY 151
ACKNOWLEDGMENTS 152
REFERENCES 152
Chapter 3. Characterization of Dielectric Films 160
I. INTRODUCTION AND BACKGROUND 160
II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS 165
III. THE CLASSIFICATION OF DIELECTRIC CHARGES 174
IV. THE SPATIAL LOCATION OF OXIDE CHARGE 181
V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS 189
VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE 197
VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS 208
VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI 217
ACKNOWLEDGMENT 225
REFERENCES 225
Chapter 4. The Status of Dry-Developed Resists for Each Lithographic Technology 230
I. INTRODUCTION 230
II. THE TOTAL DRY PROCESS 231
III. ABLATIVE RESISTS 232
IV. PHOTORESIST ANALOGS 233
V. X-RAY RESIST ANALOGS 237
VI. ELECTRON RESIST ANALOGS 253
VII. ION-BEAM RESIST ANALOGS 260
VIII. CONCLUSIONS 264
ACKNOWLEDGMENTS 265
REFERENCES 265
Chapter 5. Microlithography in Semiconductor Device Processing 268
I. INTRODUCTION 269
II. PATTERN GENERATION 273
III. PHOTOMASK FABRICATION 288
IV. WAFER RESIST PATTERNING 305
V. SUMMARY AND CONCLUSIONS 337
ACKNOWLEDGMENTS 340
REFERENCES 340
Chapter 6. Formation and Characterization of Transition-Metal Silicides 342
I. INTRODUCTION 343
II. FORMATION AND CHARACTERIZATION 350
III. SILICIDE TRANSFORMATIONS 393
IV. PROPERTIES OF SILICIDES 403
APPENDIX. SILICIDE TABLES 411
ACKNOWLEDGMENTS 472
REFERENCES 472
Chapter 7. Materials Characterization for Ion Implantation 478
I. INTRODUCTION 479
II. TECHNIQUES 480
III. APPLICATIONS 493
IV. SUMMARY 506
ACKNOWLEDGMENTS 508
REFERENCES 508
Chapter 8. Surface Characterization For VLSI 510
I. INTRODUCTION 510
II. TECHNIQUES OF SURFACE ANALYSIS 514
III. APPLICATIONS TO PROCESS FLOW 523
IV. FUTURE TRENDS AND NEEDS 532
REFERENCES 536
Chapter 9. Microelectronic Test Chips for VLSI Electronics 542
I. HISTORICAL PERSPECTIVE 542
II. INTRODUCTION 548
III. TYPES OF TEST STRUCTURES 551
IV. TEST-CHIP ORGANIZATION AND TEST-STRUCTURE DESIGN 570
V. TEST-CHIP TESTERS AND ADVANCED TEST STRUCTURES 578
VI. FUTURE DIRECTIONS 582
APPENDIX 585
ACKNOWLEDGMENTS 587
REFERENCES 587
Index 590
Contents of Other Volumes 612
Erscheint lt. Verlag | 1.12.2014 |
---|---|
Sprache | englisch |
Themenwelt | Technik ► Bauwesen |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
ISBN-10 | 1-4832-1773-6 / 1483217736 |
ISBN-13 | 978-1-4832-1773-4 / 9781483217734 |
Haben Sie eine Frage zum Produkt? |
![PDF](/img/icon_pdf_big.jpg)
Größe: 46,1 MB
Kopierschutz: Adobe-DRM
Adobe-DRM ist ein Kopierschutz, der das eBook vor Mißbrauch schützen soll. Dabei wird das eBook bereits beim Download auf Ihre persönliche Adobe-ID autorisiert. Lesen können Sie das eBook dann nur auf den Geräten, welche ebenfalls auf Ihre Adobe-ID registriert sind.
Details zum Adobe-DRM
Dateiformat: PDF (Portable Document Format)
Mit einem festen Seitenlayout eignet sich die PDF besonders für Fachbücher mit Spalten, Tabellen und Abbildungen. Eine PDF kann auf fast allen Geräten angezeigt werden, ist aber für kleine Displays (Smartphone, eReader) nur eingeschränkt geeignet.
Systemvoraussetzungen:
PC/Mac: Mit einem PC oder Mac können Sie dieses eBook lesen. Sie benötigen eine
eReader: Dieses eBook kann mit (fast) allen eBook-Readern gelesen werden. Mit dem amazon-Kindle ist es aber nicht kompatibel.
Smartphone/Tablet: Egal ob Apple oder Android, dieses eBook können Sie lesen. Sie benötigen eine
Geräteliste und zusätzliche Hinweise
Buying eBooks from abroad
For tax law reasons we can sell eBooks just within Germany and Switzerland. Regrettably we cannot fulfill eBook-orders from other countries.
aus dem Bereich