HeteroSiC & WASMPE 2013

Preface and Conference Committees
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices
3C-SiC: New Interest for MEMS Devices
Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si
Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC
Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon
Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates
Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure
Synthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial Graphene
Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces
Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications
Chapter 4: SiC Devices and Device Processing
Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode
10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect
Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures
Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides
Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3
The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors